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Title: B-doped fully strained Si{sub 1{minus}{ital x}}Ge{sub {ital x}} layers grown on Si(001) by gas-source molecular beam epitaxy from Si{sub 2}H{sub 6}, Ge{sub 2}H{sub 6}, and B{sub 2}H{sub 6}: Charge transport properties

Abstract

B-doped Si{sub 1{minus}{ital x}}Ge{sub {ital x}} layers with Ge fractions, determined by Rutherford backscattering spectroscopy, ranging from 0 to 0.28 and B concentrations, from quantitative secondary-ion spectroscopy measurements, between 5{times}10{sup 16} and 4{times}10{sup 19} cm{sup {minus}3} were grown on Si(001) at temperatures {ital T}{sub {ital s}}=475{endash}575{degree}C by gas-source molecular beam epitaxy from Si{sub 2}H{sub 6}, Ge{sub 2}H{sub 6}, and B{sub 2}H{sub 6}. Film thicknesses ranged from 200 nm for alloys with {ital x}=0.28 to 800 nm with {ital x}=0.05 to 1.4 {mu}m for Si. Structural analyses by high-resolution x-ray diffraction and reciprocal lattice mapping combined with transmission electron microscopy showed that all films were fully strained, with measured relaxations of only {approx_equal}4{times}10{sup {minus}5}, and exhibited no evidence of dislocations or other extended defects. The hole conductivity mobility {mu}{sub {ital c},{ital h}} in these layers increased continuously with increasing Ge concentrations, whereas the Hall mobility decreased yielding a Hall scattering factor that ranged from 0.75 for Si to 0.26 for Si{sub 0.72}Ge{sub 0.28} but was not strongly affected by B concentration. {mu}{sub {ital c},{ital h}}, with {ital C}{sub B}=2{times}10{sup 18} cm{sup {minus}3}, varied from 110 cm{sup 2}V{sup {minus}1}s{sup {minus}1} for Si{sub 0.95}Ge{sub 0.05} to 158 cm{sup 2}V{sup {minus}1}s{sup {minus}1} for Si{submore » 0.72}Ge{sub 0.28}, compared to 86 cm{sup 2}V{sup {minus}1}s{sup {minus}1} for Si, in good agreement with Boltzmann transport model calculations accounting for changes in the valence-band structure due to the effects of both alloying and biaxial in-plane compressional strain. {copyright} {ital 1996 American Institute of Physics.}« less

Authors:
; ; ;  [1]
  1. Materials Science Department, Engineering Science Laboratory and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)
Publication Date:
Research Org.:
Univ. of Illinois at Urbana-Champaign, IL (United States)
OSTI Identifier:
383739
DOE Contract Number:  
AC02-76ER01198
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 80; Journal Issue: 8; Other Information: PBD: Oct 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GERMANIUM SILICIDES; MOLECULAR BEAM EPITAXY; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; STRAINS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; CRYSTAL STRUCTURE; CARRIER MOBILITY; X-RAY DIFFRACTION; ELECTRON MICROSCOPY; BORON ADDITIONS; XRD; RBS

Citation Formats

Lu, Q, Sardela, Jr, M R, Bramblett, T R, and Greene, J E. B-doped fully strained Si{sub 1{minus}{ital x}}Ge{sub {ital x}} layers grown on Si(001) by gas-source molecular beam epitaxy from Si{sub 2}H{sub 6}, Ge{sub 2}H{sub 6}, and B{sub 2}H{sub 6}: Charge transport properties. United States: N. p., 1996. Web. doi:10.1063/1.363407.
Lu, Q, Sardela, Jr, M R, Bramblett, T R, & Greene, J E. B-doped fully strained Si{sub 1{minus}{ital x}}Ge{sub {ital x}} layers grown on Si(001) by gas-source molecular beam epitaxy from Si{sub 2}H{sub 6}, Ge{sub 2}H{sub 6}, and B{sub 2}H{sub 6}: Charge transport properties. United States. https://doi.org/10.1063/1.363407
Lu, Q, Sardela, Jr, M R, Bramblett, T R, and Greene, J E. 1996. "B-doped fully strained Si{sub 1{minus}{ital x}}Ge{sub {ital x}} layers grown on Si(001) by gas-source molecular beam epitaxy from Si{sub 2}H{sub 6}, Ge{sub 2}H{sub 6}, and B{sub 2}H{sub 6}: Charge transport properties". United States. https://doi.org/10.1063/1.363407.
@article{osti_383739,
title = {B-doped fully strained Si{sub 1{minus}{ital x}}Ge{sub {ital x}} layers grown on Si(001) by gas-source molecular beam epitaxy from Si{sub 2}H{sub 6}, Ge{sub 2}H{sub 6}, and B{sub 2}H{sub 6}: Charge transport properties},
author = {Lu, Q and Sardela, Jr, M R and Bramblett, T R and Greene, J E},
abstractNote = {B-doped Si{sub 1{minus}{ital x}}Ge{sub {ital x}} layers with Ge fractions, determined by Rutherford backscattering spectroscopy, ranging from 0 to 0.28 and B concentrations, from quantitative secondary-ion spectroscopy measurements, between 5{times}10{sup 16} and 4{times}10{sup 19} cm{sup {minus}3} were grown on Si(001) at temperatures {ital T}{sub {ital s}}=475{endash}575{degree}C by gas-source molecular beam epitaxy from Si{sub 2}H{sub 6}, Ge{sub 2}H{sub 6}, and B{sub 2}H{sub 6}. Film thicknesses ranged from 200 nm for alloys with {ital x}=0.28 to 800 nm with {ital x}=0.05 to 1.4 {mu}m for Si. Structural analyses by high-resolution x-ray diffraction and reciprocal lattice mapping combined with transmission electron microscopy showed that all films were fully strained, with measured relaxations of only {approx_equal}4{times}10{sup {minus}5}, and exhibited no evidence of dislocations or other extended defects. The hole conductivity mobility {mu}{sub {ital c},{ital h}} in these layers increased continuously with increasing Ge concentrations, whereas the Hall mobility decreased yielding a Hall scattering factor that ranged from 0.75 for Si to 0.26 for Si{sub 0.72}Ge{sub 0.28} but was not strongly affected by B concentration. {mu}{sub {ital c},{ital h}}, with {ital C}{sub B}=2{times}10{sup 18} cm{sup {minus}3}, varied from 110 cm{sup 2}V{sup {minus}1}s{sup {minus}1} for Si{sub 0.95}Ge{sub 0.05} to 158 cm{sup 2}V{sup {minus}1}s{sup {minus}1} for Si{sub 0.72}Ge{sub 0.28}, compared to 86 cm{sup 2}V{sup {minus}1}s{sup {minus}1} for Si, in good agreement with Boltzmann transport model calculations accounting for changes in the valence-band structure due to the effects of both alloying and biaxial in-plane compressional strain. {copyright} {ital 1996 American Institute of Physics.}},
doi = {10.1063/1.363407},
url = {https://www.osti.gov/biblio/383739}, journal = {Journal of Applied Physics},
number = 8,
volume = 80,
place = {United States},
year = {1996},
month = {10}
}