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Title: Understanding and controlling transient enhanced dopant diffusion in silicon

Abstract

Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of {approximately}3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from {l_brace}311{r_brace} defect clusters in the damage region at a rate which also exhibits an activation energy of 3.6 eV. The population of excess interstitials is strongly reduced by incorporating substitutional C in Si to levels of {approximately}10{sup 19}/cm{sup 3} prior to ion implantation. This provides a promising method for suppressing TED, thus enabling shallow junction formation in future Si devices through dopant implantation.

Authors:
; ; ; ;  [1];  [2]
  1. AT and T Bell Labs., Murray Hill, NJ (United States)
  2. AT and T Bell Labs., Breinigsville, PA (United States)
Publication Date:
OSTI Identifier:
375954
Report Number(s):
CONF-941144-
ISBN 1-55899-255-3; TRN: IM9642%%42
Resource Type:
Conference
Resource Relation:
Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 28 Nov - 9 Dec 1994; Other Information: PBD: 1995; Related Information: Is Part Of Beam-solid interactions for materials synthesis and characterization; Jacobson, D.C. [ed.] [AT and T Bell Labs., Murray Hill, NJ (United States)]; Luzzi, D.E. [ed.] [Univ. of Pennsylvania, Philadelphia, PA (United States)]; Heinz, T.F. [ed.] [Columbia Univ., New York, NY (United States)]; Iwaki, Masaya [ed.] [Inst. of Physical and Chemical Research, Wako, Saitama (Japan)]; PB: 763 p.; Materials Research Society symposium proceedings, Volume 354
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SILICON; ION IMPLANTATION; ATOM TRANSPORT; BORON; DIFFUSION; SEMICONDUCTOR DEVICES; CRYSTAL DOPING; PHYSICAL RADIATION EFFECTS; INTERSTITIALS

Citation Formats

Stolk, P A, Gossmann, H J, Eaglesham, D J, Jacobson, D C, Poate, J M, and Luftman, H S. Understanding and controlling transient enhanced dopant diffusion in silicon. United States: N. p., 1995. Web.
Stolk, P A, Gossmann, H J, Eaglesham, D J, Jacobson, D C, Poate, J M, & Luftman, H S. Understanding and controlling transient enhanced dopant diffusion in silicon. United States.
Stolk, P A, Gossmann, H J, Eaglesham, D J, Jacobson, D C, Poate, J M, and Luftman, H S. 1995. "Understanding and controlling transient enhanced dopant diffusion in silicon". United States.
@article{osti_375954,
title = {Understanding and controlling transient enhanced dopant diffusion in silicon},
author = {Stolk, P A and Gossmann, H J and Eaglesham, D J and Jacobson, D C and Poate, J M and Luftman, H S},
abstractNote = {Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of {approximately}3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from {l_brace}311{r_brace} defect clusters in the damage region at a rate which also exhibits an activation energy of 3.6 eV. The population of excess interstitials is strongly reduced by incorporating substitutional C in Si to levels of {approximately}10{sup 19}/cm{sup 3} prior to ion implantation. This provides a promising method for suppressing TED, thus enabling shallow junction formation in future Si devices through dopant implantation.},
doi = {},
url = {https://www.osti.gov/biblio/375954}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Dec 31 00:00:00 EST 1995},
month = {Sun Dec 31 00:00:00 EST 1995}
}

Conference:
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