keV- and MeV-ion beam synthesis of buried SiC layers in silicon
Abstract
Homogeneous, epitaxial buried layers of 3C-SiC have been formed in Si(100) and Si(111) by ion beam synthesis (IBS) using 180 keV high dose C ion implantation. It is shown that an annealing temperature of 1,250 C and annealing times of 5 to 10 h are sufficient to achieve well-defined Si/SiC/Si layer systems with abrupt interfaces. The influence of dose, annealing time and temperature on the layer formation is studied. The favorable dose is observed to be dependent on the substrate orientation. IBS using 0.8 MeV C ions resulted in a buried SiC precipitate layer of variable composition.
- Authors:
-
- Univ. Augsburg (Germany). Inst. fuer Physik
- Publication Date:
- OSTI Identifier:
- 375936
- Report Number(s):
- CONF-941144-
ISBN 1-55899-255-3; TRN: IM9642%%24
- Resource Type:
- Book
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 28 Nov - 9 Dec 1994; Other Information: PBD: 1995; Related Information: Is Part Of Beam-solid interactions for materials synthesis and characterization; Jacobson, D.C. [ed.] [AT and T Bell Labs., Murray Hill, NJ (United States)]; Luzzi, D.E. [ed.] [Univ. of Pennsylvania, Philadelphia, PA (United States)]; Heinz, T.F. [ed.] [Columbia Univ., New York, NY (United States)]; Iwaki, Masaya [ed.] [Inst. of Physical and Chemical Research, Wako, Saitama (Japan)]; PB: 763 p.; Materials Research Society symposium proceedings, Volume 354
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; SILICON CARBIDES; SYNTHESIS; SILICON; ION IMPLANTATION; HETEROJUNCTIONS; TEMPERATURE RANGE 1000-4000 K; CRYSTAL DOPING; EXPERIMENTAL DATA; CARBON IONS
Citation Formats
Lindner, J K.N., Frohnwieser, A, Rauschenbach, B, and Stritzker, B. keV- and MeV-ion beam synthesis of buried SiC layers in silicon. United States: N. p., 1995.
Web.
Lindner, J K.N., Frohnwieser, A, Rauschenbach, B, & Stritzker, B. keV- and MeV-ion beam synthesis of buried SiC layers in silicon. United States.
Lindner, J K.N., Frohnwieser, A, Rauschenbach, B, and Stritzker, B. 1995.
"keV- and MeV-ion beam synthesis of buried SiC layers in silicon". United States.
@article{osti_375936,
title = {keV- and MeV-ion beam synthesis of buried SiC layers in silicon},
author = {Lindner, J K.N. and Frohnwieser, A and Rauschenbach, B and Stritzker, B},
abstractNote = {Homogeneous, epitaxial buried layers of 3C-SiC have been formed in Si(100) and Si(111) by ion beam synthesis (IBS) using 180 keV high dose C ion implantation. It is shown that an annealing temperature of 1,250 C and annealing times of 5 to 10 h are sufficient to achieve well-defined Si/SiC/Si layer systems with abrupt interfaces. The influence of dose, annealing time and temperature on the layer formation is studied. The favorable dose is observed to be dependent on the substrate orientation. IBS using 0.8 MeV C ions resulted in a buried SiC precipitate layer of variable composition.},
doi = {},
url = {https://www.osti.gov/biblio/375936},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Dec 31 00:00:00 EST 1995},
month = {Sun Dec 31 00:00:00 EST 1995}
}
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