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Title: Visible-wavelength semiconductor lasers and arrays

Abstract

The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.

Inventors:
;
Publication Date:
Research Org.:
Sandia Corporation
OSTI Identifier:
372597
Patent Number(s):
US 5,557,627/A/
Application Number:
PAN: 8-444,462
Assignee:
Sandia Corp., Albuquerque, NM (United States)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 17 Sep 1996
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR LASERS; DESIGN; VISIBLE RADIATION; INDIUM PHOSPHIDES; ALUMINIUM PHOSPHIDES; GALLIUM PHOSPHIDES; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; LASER RADIATION

Citation Formats

Schneider, Jr, R P, and Crawford, M H. Visible-wavelength semiconductor lasers and arrays. United States: N. p., 1996. Web.
Schneider, Jr, R P, & Crawford, M H. Visible-wavelength semiconductor lasers and arrays. United States.
Schneider, Jr, R P, and Crawford, M H. Tue . "Visible-wavelength semiconductor lasers and arrays". United States.
@article{osti_372597,
title = {Visible-wavelength semiconductor lasers and arrays},
author = {Schneider, Jr, R P and Crawford, M H},
abstractNote = {The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1{lambda}) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {9}
}