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Title: High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices

Abstract

We report high-performance lattice-matched GaInAsSb/GaSb thermophotovoltaic (TPV) devices with a 0.5 eV band gap. The TPV structures were grown on GaSb substrates by organometallic vapor phase epitaxy at a lower temperature (525 {degree}C compared to 550 {degree}C) to improve the quality of the metastable GaInAsSb alloy. The 0.5 eV TPV devices exhibit external quantum efficiency as high as 60{percent}, which corresponds to an internal quantum efficiency of 90{percent}, assuming 35{percent} reflection losses. This efficiency is comparable to the value measured for 0.53 eV devices. The ratio of the open circuit voltage to band-gap energy ratio decreases from 0.57 for 0.53 eV devices to 0.48 for 0.5 eV devices. {copyright} {ital 1999 American Institute of Physics.}

Authors:
; ;  [1]; ; ;  [2]
  1. Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420-9108 (United States)
  2. Lockheed Martin, Inc., Schenectady, New York 12301-1072 (United States)
Publication Date:
OSTI Identifier:
365975
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 75; Journal Issue: 9; Other Information: PBD: Aug 1999
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; THERMOPHOTOVOLTAIC CONVERSION; GALLIUM ARSENIDES; INDIUM ANTIMONIDES; GALLIUM ANTIMONIDES; VAPOR PHASE EPITAXY; QUANTUM EFFICIENCY; PHOTOLUMINESCENCE

Citation Formats

Wang, C A, Choi, H K, Ransom, S L, Charache, G W, Danielson, L R, and DePoy, D M. High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices. United States: N. p., 1999. Web. doi:10.1063/1.124676.
Wang, C A, Choi, H K, Ransom, S L, Charache, G W, Danielson, L R, & DePoy, D M. High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices. United States. https://doi.org/10.1063/1.124676
Wang, C A, Choi, H K, Ransom, S L, Charache, G W, Danielson, L R, and DePoy, D M. Sun . "High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices". United States. https://doi.org/10.1063/1.124676.
@article{osti_365975,
title = {High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices},
author = {Wang, C A and Choi, H K and Ransom, S L and Charache, G W and Danielson, L R and DePoy, D M},
abstractNote = {We report high-performance lattice-matched GaInAsSb/GaSb thermophotovoltaic (TPV) devices with a 0.5 eV band gap. The TPV structures were grown on GaSb substrates by organometallic vapor phase epitaxy at a lower temperature (525 {degree}C compared to 550 {degree}C) to improve the quality of the metastable GaInAsSb alloy. The 0.5 eV TPV devices exhibit external quantum efficiency as high as 60{percent}, which corresponds to an internal quantum efficiency of 90{percent}, assuming 35{percent} reflection losses. This efficiency is comparable to the value measured for 0.53 eV devices. The ratio of the open circuit voltage to band-gap energy ratio decreases from 0.57 for 0.53 eV devices to 0.48 for 0.5 eV devices. {copyright} {ital 1999 American Institute of Physics.}},
doi = {10.1063/1.124676},
url = {https://www.osti.gov/biblio/365975}, journal = {Applied Physics Letters},
number = 9,
volume = 75,
place = {United States},
year = {1999},
month = {8}
}