Strongly Anisotropic Electronic Transport at Landau Level Filling Factor {nu} =9/2 and {nu} =5/2 under a Tilted Magnetic Field

Journal Article · Thu Jul 01 00:00:00 EDT 1999 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.83.820· OSTI ID:365890

Pan, W; Tsui, D C ^[1]; Pan, W; Du, R R ^[2]; Du, R R ^[3]; Stormer, H L; Pfeiffer, L N; Baldwin, K W; West, K W ^[4]; Stormer, H L; Stormer, H L ^[5]

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1. Department of Electrical Engineering, Princeton University, Princeton, New Jersey (United States)
2. NHMFL, Tallahassee, Florida (United States)
3. Department of Physics, University of Utah, Salt Lake City, Utah (United States)
4. Bell Labs, Lucent Technologies, Murray Hill, New Jersey (United States)
5. Department of Applied Physics, Columbia University, New York, New York (United States)

We have investigated the influence of an increasing in-plane magnetic field on the states of half filling of Landau levels ({nu}=11/2, 9/2, 7/2, thinspandthinsp 5/2) of a two-dimensional electron system. In the electrically anisotropic phase at {nu}=9/2 and 11/2 an in-plane magnetic field of {approximately}1{endash}2 T overcomes its initial pinning to the crystal lattice and {ital reorients} this phase. In the initially isotropic phases at {nu}=5/2 and 7/2 an in-plane magnetic field {ital induces } a strong electrical anisotropy. In all cases, for high in-plane fields the high-resistance axis is parallel to the direction of the in-plane field. {copyright} {ital 1999} {ital The American Physical Society }

• OSTI ID: 365890
• Journal Information: Physical Review Letters, Vol. 83, Issue 4; Other Information: PBD: Jul 1999
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
HALL EFFECT
ELECTRIC CONDUCTIVITY
ANISOTROPY
MAGNETIC FIELDS
MAGNETORESISTANCE