Energetics and bias-dependent scanning tunneling microscopy images of Si ad-dimers on Ge(001)

doi:https://doi.org/10.1103/PhysRevB.60.4458

Title: Energetics and bias-dependent scanning tunneling microscopy images of Si ad-dimers on Ge(001)

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Abstract

We report an {ital ab initio} study of the energetics and scanning tunneling microscopy (STM) images of Si ad-dimers on Ge(001) and energetics of Ge ad-dimers on Si(001). As in the case of Si dimers on Si(001), we find for both systems that the {ital D} dimer configuration, lying between the substrate dimer rows and parallel to them, is highest in energy. Conversely, recent STM experiments for Si ad-dimers on Ge(001) deduce the {ital D} configuration to be most stable. Our theoretical STM images for this system find that both the {ital D} and {ital C} configurations (the latter also between the rows) have similar STM images for the experimental voltages. We propose an experimental test (low-bias STM imaging) which would unambiguously distinguish between the {ital D} and {ital C} configurations. {copyright} {ital 1999} {ital The American Physical Society}

Authors:

Khare, S V; Kulkarni, R V; Stroud, D; Wilkins, J W ^[1]

Department of Physics, Ohio State University, Columbus, Ohio 43210 (United States)

Publication Date:: 1999-08-01

OSTI Identifier:: 362689

Resource Type:: Journal Article

Journal Name:: Physical Review, B: Condensed Matter

Additional Journal Information:: Journal Volume: 60; Journal Issue: 7; Other Information: PBD: Aug 1999

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; SILICON; ELECTRON MICROSCOPY; GERMANIUM; DIMERS; GROWTH; ADSORPTION

Citation Formats


                    Khare, S V, Kulkarni, R V, Stroud, D, and Wilkins, J W. Energetics and bias-dependent scanning tunneling microscopy images of Si ad-dimers on Ge(001).  United States: N. p., 1999. 
        Web.  doi:10.1103/PhysRevB.60.4458.

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                    Khare, S V, Kulkarni, R V, Stroud, D, & Wilkins, J W. Energetics and bias-dependent scanning tunneling microscopy images of Si ad-dimers on Ge(001).  United States.  https://doi.org/10.1103/PhysRevB.60.4458

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                    Khare, S V, Kulkarni, R V, Stroud, D, and Wilkins, J W. Sun .  
        "Energetics and bias-dependent scanning tunneling microscopy images of Si ad-dimers on Ge(001)".  United States.  https://doi.org/10.1103/PhysRevB.60.4458.

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@article{osti_362689,

  title        = {Energetics and bias-dependent scanning tunneling microscopy images of Si ad-dimers on Ge(001)},

  author       = {Khare, S V and Kulkarni, R V and Stroud, D and Wilkins, J W},

  abstractNote = {We report an {ital ab initio} study of the energetics and scanning tunneling microscopy (STM) images of Si ad-dimers on Ge(001) and energetics of Ge ad-dimers on Si(001). As in the case of Si dimers on Si(001), we find for both systems that the {ital D} dimer configuration, lying between the substrate dimer rows and parallel to them, is highest in energy. Conversely, recent STM experiments for Si ad-dimers on Ge(001) deduce the {ital D} configuration to be most stable. Our theoretical STM images for this system find that both the {ital D} and {ital C} configurations (the latter also between the rows) have similar STM images for the experimental voltages. We propose an experimental test (low-bias STM imaging) which would unambiguously distinguish between the {ital D} and {ital C} configurations. {copyright} {ital 1999} {ital The American Physical Society}},

  doi          = {10.1103/PhysRevB.60.4458},

  url          = {https://www.osti.gov/biblio/362689},
  journal      = {Physical Review, B: Condensed Matter},
number       = 7,

  volume       = 60,

  place        = {United States},

  year         = {1999},

  month        = {8}

}

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