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Title: Energetics and bias-dependent scanning tunneling microscopy images of Si ad-dimers on Ge(001)

Abstract

We report an {ital ab initio} study of the energetics and scanning tunneling microscopy (STM) images of Si ad-dimers on Ge(001) and energetics of Ge ad-dimers on Si(001). As in the case of Si dimers on Si(001), we find for both systems that the {ital D} dimer configuration, lying between the substrate dimer rows and parallel to them, is highest in energy. Conversely, recent STM experiments for Si ad-dimers on Ge(001) deduce the {ital D} configuration to be most stable. Our theoretical STM images for this system find that both the {ital D} and {ital C} configurations (the latter also between the rows) have similar STM images for the experimental voltages. We propose an experimental test (low-bias STM imaging) which would unambiguously distinguish between the {ital D} and {ital C} configurations. {copyright} {ital 1999} {ital The American Physical Society}

Authors:
; ; ;  [1]
  1. Department of Physics, Ohio State University, Columbus, Ohio 43210 (United States)
Publication Date:
OSTI Identifier:
362689
Resource Type:
Journal Article
Journal Name:
Physical Review, B: Condensed Matter
Additional Journal Information:
Journal Volume: 60; Journal Issue: 7; Other Information: PBD: Aug 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; ELECTRON MICROSCOPY; GERMANIUM; DIMERS; GROWTH; ADSORPTION

Citation Formats

Khare, S V, Kulkarni, R V, Stroud, D, and Wilkins, J W. Energetics and bias-dependent scanning tunneling microscopy images of Si ad-dimers on Ge(001). United States: N. p., 1999. Web. doi:10.1103/PhysRevB.60.4458.
Khare, S V, Kulkarni, R V, Stroud, D, & Wilkins, J W. Energetics and bias-dependent scanning tunneling microscopy images of Si ad-dimers on Ge(001). United States. https://doi.org/10.1103/PhysRevB.60.4458
Khare, S V, Kulkarni, R V, Stroud, D, and Wilkins, J W. Sun . "Energetics and bias-dependent scanning tunneling microscopy images of Si ad-dimers on Ge(001)". United States. https://doi.org/10.1103/PhysRevB.60.4458.
@article{osti_362689,
title = {Energetics and bias-dependent scanning tunneling microscopy images of Si ad-dimers on Ge(001)},
author = {Khare, S V and Kulkarni, R V and Stroud, D and Wilkins, J W},
abstractNote = {We report an {ital ab initio} study of the energetics and scanning tunneling microscopy (STM) images of Si ad-dimers on Ge(001) and energetics of Ge ad-dimers on Si(001). As in the case of Si dimers on Si(001), we find for both systems that the {ital D} dimer configuration, lying between the substrate dimer rows and parallel to them, is highest in energy. Conversely, recent STM experiments for Si ad-dimers on Ge(001) deduce the {ital D} configuration to be most stable. Our theoretical STM images for this system find that both the {ital D} and {ital C} configurations (the latter also between the rows) have similar STM images for the experimental voltages. We propose an experimental test (low-bias STM imaging) which would unambiguously distinguish between the {ital D} and {ital C} configurations. {copyright} {ital 1999} {ital The American Physical Society}},
doi = {10.1103/PhysRevB.60.4458},
url = {https://www.osti.gov/biblio/362689}, journal = {Physical Review, B: Condensed Matter},
number = 7,
volume = 60,
place = {United States},
year = {1999},
month = {8}
}