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Title: Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications

Abstract

Physical and numerical modeling of impurity gettering from multicrystalline Si for solar cell production has been carried out using Fe as a model impurity. Calculated change of nonradiative recombination coefficient of minority carriers in the course of gettering is used as a tool for evaluating the gettering efficiency. A derivation of the capture cross section of impurity precipitates, as compared to single atom recombination centers, is presented. Low efficiency of the conventional application of the gettering process is explained by the modeling results. The variable temperature gettering process is modeled and predicted to provide high gettering efficiency and short needed gettering times. {copyright} {ital 1999 American Institute of Physics.}

Authors:
; ; ;  [1]
  1. Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708-0300 (United States)
Publication Date:
OSTI Identifier:
362667
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 86; Journal Issue: 5; Other Information: PBD: Sep 1999
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON; GETTERS; SOLAR CELLS; SILICON SOLAR CELLS; CARRIER LIFETIME; GETTERING; IMPURITIES; IRON; PRECIPITATION; NUMERICAL SOLUTION

Citation Formats

Plekhanov, P.S., Gafiteanu, R., Goesele, U.M., and Tan, T.Y. Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications. United States: N. p., 1999. Web. doi:10.1063/1.371075.
Plekhanov, P.S., Gafiteanu, R., Goesele, U.M., & Tan, T.Y. Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications. United States. doi:10.1063/1.371075.
Plekhanov, P.S., Gafiteanu, R., Goesele, U.M., and Tan, T.Y. Wed . "Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications". United States. doi:10.1063/1.371075.
@article{osti_362667,
title = {Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications},
author = {Plekhanov, P.S. and Gafiteanu, R. and Goesele, U.M. and Tan, T.Y.},
abstractNote = {Physical and numerical modeling of impurity gettering from multicrystalline Si for solar cell production has been carried out using Fe as a model impurity. Calculated change of nonradiative recombination coefficient of minority carriers in the course of gettering is used as a tool for evaluating the gettering efficiency. A derivation of the capture cross section of impurity precipitates, as compared to single atom recombination centers, is presented. Low efficiency of the conventional application of the gettering process is explained by the modeling results. The variable temperature gettering process is modeled and predicted to provide high gettering efficiency and short needed gettering times. {copyright} {ital 1999 American Institute of Physics.}},
doi = {10.1063/1.371075},
journal = {Journal of Applied Physics},
number = 5,
volume = 86,
place = {United States},
year = {1999},
month = {9}
}