Magnetic semiconductor quantum wells in high fields to 60 Tesla: Photoluminescence linewidth annealing at magnetization steps
- National High Magnetic Field Laboratory, MS E536, Los Alamos, New Mexico 87545 (United States)
- Sandia National Laboratory, P.O. Box 5800, MS-1415, Albuquerque, New Mexico 87185 (United States)
- Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
- Department of Physics, University of California, Santa Barbara, California 93106 (United States)
Magnetic semiconductors offer a unique possibility for strongly tuning the intrinsic alloy disorder potential with applied magnetic field. We report the direct observation of a series of steplike reductions in the magnetic alloy disorder potential in single ZnSe/Zn(Cd,&hthinsp;Mn)Se quantum wells between 0 and 60 T. This disorder, measured through the linewidth of low-temperature photoluminescence spectra, drops abruptly at {approximately}19, 36, and 53 T, in concert with observed magnetization steps. Conventional models of alloy disorder (developed for nonmagnetic semiconductors) reproduce the general shape of the data, but markedly underestimate the size of the linewidth reduction. {copyright} {ital 1999} {ital The American Physical Society}
- OSTI ID:
- 357612
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 60, Issue 4; Other Information: PBD: Jul 1999
- Country of Publication:
- United States
- Language:
- English
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