Influence of processing conditions on performance and stability in polycrystalline thin-film CdTe-based solar cells
- Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716 (United States)
The influence of processing conditions on the performance of polycrystalline thin-film CdTe-based solar cells and the relationship to device stability are addressed. Specifically, processing conditions with respect to the window layer, post-CdTe deposition treatments, and contacting treatments are examined. The use of high resistivity interlayers between the transparent conductive oxide and the CdS allows open circuit voltage to be maintained as the CdS thickness is reduced. CdS-CdTe interdiffusion is reduced by either use of a short 600&hthinsp;{degree}C anneal prior to CdCl{sub 2} vapor treatment or by use of CdTe{sub 1{minus}x}S{sub x} alloy absorber layers. Finally, the effects of CdTe{sub 1{minus}x}S{sub x} surface modification and Cu reaction on device current-voltage behavior are presented. {copyright} {ital 1999 American Institute of Physics.}
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 357194
- Report Number(s):
- CONF-980935-; ISSN 0094-243X; TRN: 9915M0030
- Journal Information:
- AIP Conference Proceedings, Vol. 462, Issue 1; Conference: 15. National Center for Photovoltaics program review conference, Denver, CO (United States), 9-11 Sep 1998; Other Information: PBD: Mar 1999
- Country of Publication:
- United States
- Language:
- English
Similar Records
Interdiffusion in polycrystalline thin-film CdTe/CdS solar cells
Sulfur diffusion in polycrystalline thin-film CdTe solar cells