Theory of the (3x2) Reconstruction of the GaAs(001) Surface
Conference
·
OSTI ID:3569
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 3569
- Report Number(s):
- SAND99-2795C
- Resource Relation:
- Conference: Lawrence Symposium on Critical Issues in Epitaxy at Arizona State University (Materials Science & Engineering B); Mesa, AZ; 01/06-09/1999
- Country of Publication:
- United States
- Language:
- English
Similar Records
Entropy-driven Stabilization of Surface Reconstructions on GaAs(001) .
Theory of surface diffusion limited alloying during growth : the first monolayer of Ge on Si(001).
Unreconstructed As atoms mixed with (3x2) cells and (6x6) supercells in low As pressure epitaxy on GaAs(001)
Journal Article
·
Tue May 01 00:00:00 EDT 2012
· Proposed for publication in Physical Review Letters.
·
OSTI ID:3569
+1 more
Theory of surface diffusion limited alloying during growth : the first monolayer of Ge on Si(001).
Conference
·
Tue Jun 01 00:00:00 EDT 2004
·
OSTI ID:3569
Unreconstructed As atoms mixed with (3x2) cells and (6x6) supercells in low As pressure epitaxy on GaAs(001)
Journal Article
·
Thu Dec 15 00:00:00 EST 2005
· Physical Review. B, Condensed Matter and Materials Physics
·
OSTI ID:3569
+2 more