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Title: Growth of epitaxial CoSi{sub 2} on SiGe(001)

Abstract

A technique for achieving epitaxial growth of (001)-oriented CoSi{sub 2} on strained epitaxial layers of Si{sub 1{minus}x}Ge{sub x}(001) is described. The technique is based on a variation of the template method, and is designed to control the local environment of Co atoms at the CoSi{sub 2}/SiGe interface. The effects of the Co{endash}Ge interactions on the interfacial reaction and the epitaxial orientation and the morphology of the silicide film were investigated. This reaction was found to cause pitting in (001)-oriented CoSi{sub 2} films, and to stabilize the (22{ovr 1}) orientation for films codeposited under conditions where CoSi{sub 2}(001) growth is achieved on Si(001) substrates. The (22{ovr 1})-oriented CoSi{sub 2} films were islanded after annealing at 700thinsp{degree}C. The islands were terminated by ({ovr 1}11) and (110) facets inclined at 15.8{degree} and 19.5{degree}, respectively, from CoSi{sub 2} [22{ovr 1}] towards CoSi{sub 2} [114]. These results were interpreted in terms of reduction of interfacial and surface energies, and geometric effects. Silicide films up to 730-{Angstrom}-thick were deposited and annealed up to 900thinsp{degree}C. The films were stable against agglomeration, and retained tensile stress in the CoSi{sub 2} layer after annealing at 700thinsp{degree}C. The rms roughness of the CoSi{sub 2} films was comparable to that ofmore » the Si(001) substrate{emdash}less than 15 {Angstrom} over areas as large as 20{times}20 {mu}m{sup 2}. Films annealed at 900{degree}C were severely agglomerated. {copyright} {ital 1999 American Institute of Physics.}« less

Authors:
; ; ;  [1]
  1. Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)
Publication Date:
OSTI Identifier:
355429
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 86; Journal Issue: 3; Other Information: PBD: Aug 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COBALT COMPOUNDS; COBALT SILICIDES; EPITAXY; GERMANIUM SILICIDES; INTERFACES; CHEMICAL REACTIONS; SURFACE ENERGY; THIN FILMS; ANNEALING

Citation Formats

Boyanov, B I, Goeller, P T, Sayers, D E, and Nemanich, R J. Growth of epitaxial CoSi{sub 2} on SiGe(001). United States: N. p., 1999. Web. doi:10.1063/1.370894.
Boyanov, B I, Goeller, P T, Sayers, D E, & Nemanich, R J. Growth of epitaxial CoSi{sub 2} on SiGe(001). United States. https://doi.org/10.1063/1.370894
Boyanov, B I, Goeller, P T, Sayers, D E, and Nemanich, R J. 1999. "Growth of epitaxial CoSi{sub 2} on SiGe(001)". United States. https://doi.org/10.1063/1.370894.
@article{osti_355429,
title = {Growth of epitaxial CoSi{sub 2} on SiGe(001)},
author = {Boyanov, B I and Goeller, P T and Sayers, D E and Nemanich, R J},
abstractNote = {A technique for achieving epitaxial growth of (001)-oriented CoSi{sub 2} on strained epitaxial layers of Si{sub 1{minus}x}Ge{sub x}(001) is described. The technique is based on a variation of the template method, and is designed to control the local environment of Co atoms at the CoSi{sub 2}/SiGe interface. The effects of the Co{endash}Ge interactions on the interfacial reaction and the epitaxial orientation and the morphology of the silicide film were investigated. This reaction was found to cause pitting in (001)-oriented CoSi{sub 2} films, and to stabilize the (22{ovr 1}) orientation for films codeposited under conditions where CoSi{sub 2}(001) growth is achieved on Si(001) substrates. The (22{ovr 1})-oriented CoSi{sub 2} films were islanded after annealing at 700thinsp{degree}C. The islands were terminated by ({ovr 1}11) and (110) facets inclined at 15.8{degree} and 19.5{degree}, respectively, from CoSi{sub 2} [22{ovr 1}] towards CoSi{sub 2} [114]. These results were interpreted in terms of reduction of interfacial and surface energies, and geometric effects. Silicide films up to 730-{Angstrom}-thick were deposited and annealed up to 900thinsp{degree}C. The films were stable against agglomeration, and retained tensile stress in the CoSi{sub 2} layer after annealing at 700thinsp{degree}C. The rms roughness of the CoSi{sub 2} films was comparable to that of the Si(001) substrate{emdash}less than 15 {Angstrom} over areas as large as 20{times}20 {mu}m{sup 2}. Films annealed at 900{degree}C were severely agglomerated. {copyright} {ital 1999 American Institute of Physics.}},
doi = {10.1063/1.370894},
url = {https://www.osti.gov/biblio/355429}, journal = {Journal of Applied Physics},
number = 3,
volume = 86,
place = {United States},
year = {Sun Aug 01 00:00:00 EDT 1999},
month = {Sun Aug 01 00:00:00 EDT 1999}
}