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Title: High-performance, 0.6-eV, Ga{sub 0.32}In{sub 0.68}As/InAs{sub 0.32}P{sub 0.68} thermophotovoltaic converters and monolithically interconnected modules

Abstract

Recent progress in the development of high-performance, 0.6-eV Ga{sub 0.32}In{sub 0.68}As/InAs{sub 0.32}P{sub 0.68} thermophotovoltaic (TPV) converters and monolithically interconnected modules (MIMs) is described. The converter structure design is based on using a lattice-matched InAs{sub 0.32}P{sub 0.68}/Ga{sub 0.32}In{sub 0.68}As/InAs{sub 0.32}P{sub 0.68} double-heterostructure (DH) device, which is grown lattice-mismatched on an InP substrate, with an intervening compositionally step-graded region of InAs{sub y}P{sub 1{minus}y}. The Ga{sub 0.32}In{sub 0.68}As alloy has a room-temperature band gap of {approximately}0.6 eV and contains a p/n junction. The InAs{sub 0.32}P{sub 0.68} layers have a room-temperature band gap of {approximately}0.96 eV and serve as passivation/confinement layers for the Ga{sub 0.32}In{sub 0.68}As p/n junction. InAs{sub y}P{sub 1{minus}y} step grades have yielded DH converters with superior electronic quality and performance characteristics. Details of the microstructure of the converters are presented. Converters prepared for this work were grown by atmospheric-pressure metalorganic vapor-phase epitaxy (APMOVPE) and were processed using a combination of photolithography, wet-chemical etching, and conventional metal and insulator deposition techniques. Excellent performance characteristics have been demonstrated for the 0.6-eV TPV converters. Additionally, the implementation of MIM technology in these converters has been highly successful. {copyright} {ital 1999 American Institute of Physics.}

Authors:
; ; ; ; ; ; ; ;  [1];  [2]
  1. National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, Colorado, 80401 (United States)
  2. Bettis Atomic Power Laboratory, P.O. Box 79/ZAP08D, West Mifflin, Pennsylvania, 15122 (United States)
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
352902
Report Number(s):
CONF-981055-
Journal ID: APCPCS; ISSN 0094-243X; TRN: 9913M0003
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 460; Journal Issue: 1; Conference: 4. National Renewable Energy Laboratory (NREL) conference on thermophotovoltaic generation of electricity, Denver, CO (United States), 11-14 Oct 1998; Other Information: PBD: Mar 1999
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; DIRECT ENERGY CONVERSION; INDIUM COMPOUNDS; INTERCONNECTED POWER SYSTEMS; THERMOPHOTOVOLTAIC CONVERTERS; PERFORMANCE; ENERGY GAP; MICROSTRUCTURE; GALLIUM ARSENIDE SOLAR CELLS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; DEPOSITION; NATIONAL RENEWABLE ENERGY LABORATORY; BETTIS

Citation Formats

Wanlass, M W, Carapella, J J, Duda, A, Emery, K, Gedvilas, L, Moriarty, T, Ward, S, Webb, J D, Wu, X, and Murray, C S. High-performance, 0.6-eV, Ga{sub 0.32}In{sub 0.68}As/InAs{sub 0.32}P{sub 0.68} thermophotovoltaic converters and monolithically interconnected modules. United States: N. p., 1999. Web. doi:10.1063/1.57793.
Wanlass, M W, Carapella, J J, Duda, A, Emery, K, Gedvilas, L, Moriarty, T, Ward, S, Webb, J D, Wu, X, & Murray, C S. High-performance, 0.6-eV, Ga{sub 0.32}In{sub 0.68}As/InAs{sub 0.32}P{sub 0.68} thermophotovoltaic converters and monolithically interconnected modules. United States. https://doi.org/10.1063/1.57793
Wanlass, M W, Carapella, J J, Duda, A, Emery, K, Gedvilas, L, Moriarty, T, Ward, S, Webb, J D, Wu, X, and Murray, C S. Mon . "High-performance, 0.6-eV, Ga{sub 0.32}In{sub 0.68}As/InAs{sub 0.32}P{sub 0.68} thermophotovoltaic converters and monolithically interconnected modules". United States. https://doi.org/10.1063/1.57793.
@article{osti_352902,
title = {High-performance, 0.6-eV, Ga{sub 0.32}In{sub 0.68}As/InAs{sub 0.32}P{sub 0.68} thermophotovoltaic converters and monolithically interconnected modules},
author = {Wanlass, M W and Carapella, J J and Duda, A and Emery, K and Gedvilas, L and Moriarty, T and Ward, S and Webb, J D and Wu, X and Murray, C S},
abstractNote = {Recent progress in the development of high-performance, 0.6-eV Ga{sub 0.32}In{sub 0.68}As/InAs{sub 0.32}P{sub 0.68} thermophotovoltaic (TPV) converters and monolithically interconnected modules (MIMs) is described. The converter structure design is based on using a lattice-matched InAs{sub 0.32}P{sub 0.68}/Ga{sub 0.32}In{sub 0.68}As/InAs{sub 0.32}P{sub 0.68} double-heterostructure (DH) device, which is grown lattice-mismatched on an InP substrate, with an intervening compositionally step-graded region of InAs{sub y}P{sub 1{minus}y}. The Ga{sub 0.32}In{sub 0.68}As alloy has a room-temperature band gap of {approximately}0.6 eV and contains a p/n junction. The InAs{sub 0.32}P{sub 0.68} layers have a room-temperature band gap of {approximately}0.96 eV and serve as passivation/confinement layers for the Ga{sub 0.32}In{sub 0.68}As p/n junction. InAs{sub y}P{sub 1{minus}y} step grades have yielded DH converters with superior electronic quality and performance characteristics. Details of the microstructure of the converters are presented. Converters prepared for this work were grown by atmospheric-pressure metalorganic vapor-phase epitaxy (APMOVPE) and were processed using a combination of photolithography, wet-chemical etching, and conventional metal and insulator deposition techniques. Excellent performance characteristics have been demonstrated for the 0.6-eV TPV converters. Additionally, the implementation of MIM technology in these converters has been highly successful. {copyright} {ital 1999 American Institute of Physics.}},
doi = {10.1063/1.57793},
url = {https://www.osti.gov/biblio/352902}, journal = {AIP Conference Proceedings},
number = 1,
volume = 460,
place = {United States},
year = {1999},
month = {3}
}