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Title: Periodic dielectric structure for production of photonic band gap and method for fabricating the same

Abstract

A method is disclosed for fabricating a periodic dielectric structure which exhibits a photonic band gap. Alignment holes are formed in a wafer of dielectric material having a given crystal orientation. A planar layer of elongate rods is then formed in a section of the wafer. The formation of the rods includes the step of selectively removing the dielectric material of the wafer between the rods. The formation of alignment holes and layers of elongate rods and wafers is then repeated to form a plurality of patterned wafers. A stack of patterned wafers is then formed by rotating each successive wafer with respect to the next-previous wafer, and then placing the successive wafer on the stack. This stacking results in a stack of patterned wafers having a four-layer periodicity exhibiting a photonic band gap. 42 figures.

Inventors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Iowa State University
OSTI Identifier:
35068
Patent Number(s):
US 5,406,573/A/
Application Number:
PAN: 8-151,274
Assignee:
Iowa State Univ. Research Foundation, Ames, IA (United States) PTO; SCA: 360601; 360606; PA: EDB-95:064557; SN: 95001365509
DOE Contract Number:  
W-7405-ENG-82
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 11 Apr 1995
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPOSITE MATERIALS; FABRICATION; OPTICAL PROPERTIES; DIELECTRIC MATERIALS; BAND THEORY; GRAIN ORIENTATION

Citation Formats

Ozbay, E., Tuttle, G., Michel, E., Ho, K.M., Biswas, R., Chan, C.T., and Soukoulis, C. Periodic dielectric structure for production of photonic band gap and method for fabricating the same. United States: N. p., 1995. Web.
Ozbay, E., Tuttle, G., Michel, E., Ho, K.M., Biswas, R., Chan, C.T., & Soukoulis, C. Periodic dielectric structure for production of photonic band gap and method for fabricating the same. United States.
Ozbay, E., Tuttle, G., Michel, E., Ho, K.M., Biswas, R., Chan, C.T., and Soukoulis, C. Tue . "Periodic dielectric structure for production of photonic band gap and method for fabricating the same". United States.
@article{osti_35068,
title = {Periodic dielectric structure for production of photonic band gap and method for fabricating the same},
author = {Ozbay, E. and Tuttle, G. and Michel, E. and Ho, K.M. and Biswas, R. and Chan, C.T. and Soukoulis, C.},
abstractNote = {A method is disclosed for fabricating a periodic dielectric structure which exhibits a photonic band gap. Alignment holes are formed in a wafer of dielectric material having a given crystal orientation. A planar layer of elongate rods is then formed in a section of the wafer. The formation of the rods includes the step of selectively removing the dielectric material of the wafer between the rods. The formation of alignment holes and layers of elongate rods and wafers is then repeated to form a plurality of patterned wafers. A stack of patterned wafers is then formed by rotating each successive wafer with respect to the next-previous wafer, and then placing the successive wafer on the stack. This stacking results in a stack of patterned wafers having a four-layer periodicity exhibiting a photonic band gap. 42 figures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 11 00:00:00 EDT 1995},
month = {Tue Apr 11 00:00:00 EDT 1995}
}