Optimization of an ionized metal physical vapor deposition reactor
- Univ. of Illinois, Urbana, IL (United States)
Conventional sputtering for microelectronic fabrication produces poorly collimated neutral atom fluxes. Ion fluxes, however, can be accelerated and collimated by using a conventional dc or rf substrate bias. Hence, magnetron ionized metal physical vapor deposition (IMPVD) can produce highly ionized metal fluxes that can be used to fill high-aspect-ratio vias and trenches in microelectronic devices. Hopwood and Qian have examined design issues in IMPVD systems. In this study, a Design of Experiment (DOE) has been numerically performed for an IMPVD reactor using an inductively coupled plasma and a capacitively biased substrate. Gas pressure, reactor geometry, ICP power, and number of inductive coils are the design variables. Uniformity, magnitude, and ionization fraction of the depositing fluxes are the response variables. The influence of the design variables on the response variables is examined, with the goals of obtaining high uniformity, high magnitude, and high ionization fraction of the depositing metal fluxes. The computational tool used in this study is the two-dimensional Hybrid Plasma Equipment Model (HPEM). The aspect ratio of the reactor (height/radius) ranges from 0.5 to 1.0, the gas pressure ranges from 10 to 40 mTorr, the ICP power ranges from 0.5 to 2.0 kW, and the number of ICP coils ranges from 2 to 6. It was found that: (a) uniformity maximizes at high aspect ratio, low power, and high pressure; (b) flux magnitude maximizes at low aspect ratio, high power, and low pressure; (c) ionization fraction maximizes at high aspect ratio, high power, and high pressure.
- OSTI ID:
- 346898
- Report Number(s):
- CONF-980601-; TRN: IM9920%%115
- Resource Relation:
- Conference: 25. international conference on plasma science, Raleigh, NC (United States), 1-4 Jun 1998; Other Information: PBD: 1998; Related Information: Is Part Of IEEE conference record -- Abstracts. 1998 IEEE international conference on plasma science; PB: 343 p.
- Country of Publication:
- United States
- Language:
- English
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