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Title: A high voltage pulser R and D for plasma immersion ion implantation applications

Abstract

Plasma Immersion Ion Implantation (PIII) is a technology used to modify the material surface properties of a variety of products, e.g., for the manufacturing of semiconductor junctions and oxides, and for the production of high-strength, light-weight corrosion-resistant aerospace components. PIII applies a series of negative high-voltage pulses to a sample (target) immersed in plasma. High-Voltage Pulse Generator was built in a circuit category of Pulse Forming Network (PFN), consisting of 10 LC sections with L = 100 {micro}H, C = 2.5 nF and metglas core high-voltage pulse transformer. The instrument was designed to produce an adjustable, several amperes, flat 100 kV pulse with 10 {micro}s duration and pulse repetition frequency (PRF) from 50 Hz to 7 kHz. The generator is fed with sine wave, constant high current source, and 20 kV, 3 A switching power supply. Experimental results are presented for: (1) the shapes of voltage and current pulses of the PIII reactor; (2) current-voltage dependence of the PIII reactor at constant plasma RF ignition. Both characteristics obtained show that the High-Voltage Pulse Generator can be successfully used in various technological processes which utilize PIII. The important advantage of the high-voltage pulser design to similar devices is its small geometricalmore » size of approximately 1 m{sup 3}. The results obtained lead to determination of nomograms for important technological parameters such as the time of irradiation, absorbed ion dose on the sample surface.« less

Authors:
 [1];  [2]; ;  [3]
  1. Computer Network Communications, Inc., Crown Point, IN (United States)
  2. Purdue Univ., Hammond, IN (United States). Dept. of Material Science
  3. National Inst. for Space Research, Sao Paulo (Brazil). Associated Plasma Lab.
Publication Date:
OSTI Identifier:
346847
Report Number(s):
CONF-980601-
Journal ID: ISSN 0730-9244; TRN: IM9920%%64
Resource Type:
Conference
Resource Relation:
Conference: 25. international conference on plasma science, Raleigh, NC (United States), 1-4 Jun 1998; Other Information: PBD: 1998; Related Information: Is Part Of IEEE conference record -- Abstracts. 1998 IEEE international conference on plasma science; PB: 343 p.
Country of Publication:
United States
Language:
English
Subject:
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION; ION IMPLANTATION; SURFACE TREATMENTS; HIGH-VOLTAGE PULSE GENERATORS; DESIGN; POWER SUPPLIES; CHEMICAL REACTORS; USES; AEROSPACE INDUSTRY

Citation Formats

Spassov, V, Gueorguiev, L, Barroso, J, and Ueda, M. A high voltage pulser R and D for plasma immersion ion implantation applications. United States: N. p., 1998. Web.
Spassov, V, Gueorguiev, L, Barroso, J, & Ueda, M. A high voltage pulser R and D for plasma immersion ion implantation applications. United States.
Spassov, V, Gueorguiev, L, Barroso, J, and Ueda, M. Thu . "A high voltage pulser R and D for plasma immersion ion implantation applications". United States.
@article{osti_346847,
title = {A high voltage pulser R and D for plasma immersion ion implantation applications},
author = {Spassov, V and Gueorguiev, L and Barroso, J and Ueda, M},
abstractNote = {Plasma Immersion Ion Implantation (PIII) is a technology used to modify the material surface properties of a variety of products, e.g., for the manufacturing of semiconductor junctions and oxides, and for the production of high-strength, light-weight corrosion-resistant aerospace components. PIII applies a series of negative high-voltage pulses to a sample (target) immersed in plasma. High-Voltage Pulse Generator was built in a circuit category of Pulse Forming Network (PFN), consisting of 10 LC sections with L = 100 {micro}H, C = 2.5 nF and metglas core high-voltage pulse transformer. The instrument was designed to produce an adjustable, several amperes, flat 100 kV pulse with 10 {micro}s duration and pulse repetition frequency (PRF) from 50 Hz to 7 kHz. The generator is fed with sine wave, constant high current source, and 20 kV, 3 A switching power supply. Experimental results are presented for: (1) the shapes of voltage and current pulses of the PIII reactor; (2) current-voltage dependence of the PIII reactor at constant plasma RF ignition. Both characteristics obtained show that the High-Voltage Pulse Generator can be successfully used in various technological processes which utilize PIII. The important advantage of the high-voltage pulser design to similar devices is its small geometrical size of approximately 1 m{sup 3}. The results obtained lead to determination of nomograms for important technological parameters such as the time of irradiation, absorbed ion dose on the sample surface.},
doi = {},
journal = {},
issn = {0730-9244},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {12}
}

Conference:
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