skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Asymmetric extreme ultraviolet scattering from sputter-deposited multilayers

Journal Article · · Physical Review, B: Condensed Matter
 [1];  [2]
  1. Center for X-ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  2. OS Associates, 1174 Castro Street, Suite 250, Mountain View, California 94040 (United States)

Asymmetric scattering of extreme ultraviolet light is observed from Mo/Si multilayers at normal incidence. The observed asymmetry is shown to depend on the geometry of the multilayer film deposition. However, atomic force microscopy (AFM) measurements of the top surface were isotropic, and there was no indication of columnar film growth either in the AFM or in TEM cross-sectional measurements. The scattering asymmetry is instead found to result from a skewed propagation of roughness within the multilayer. A modified film growth model is developed which describes this, and is also used to calculate the nonspecular scattering. The results of the model are in excellent agreement with the measurements. The scattering asymmetry can be used to determine the average deposition angle during the film growth. {copyright} {ital 1999} {ital The American Physical Society}

OSTI ID:
341388
Journal Information:
Physical Review, B: Condensed Matter, Vol. 59, Issue 20; Other Information: PBD: May 1999
Country of Publication:
United States
Language:
English

Similar Records

Stress, reflectance, and temporal stability of sputter-deposited Mo/Si and Mo/Be multilayer films for extreme ultraviolet lithography
Journal Article · Thu Jul 01 00:00:00 EDT 1999 · Optical Engineering · OSTI ID:341388

Defect coverage profile and propagation of roughness of sputter-deposited Mo/Si multilayer coating for extreme ultraviolet projection lithography
Journal Article · Mon Nov 01 00:00:00 EST 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) · OSTI ID:341388

Mask blanks for extreme ultraviolet lithography: Ion beam sputter deposition of low defect density Mo/Si multilayers
Journal Article · Sat Nov 01 00:00:00 EST 1997 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena · OSTI ID:341388