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Title: Observation of growth modes during metal-organic chemical vapor deposition of GaN

Abstract

We present real-time surface x-ray scattering measurements during homoepitaxial growth of GaN by metal-organic chemical vapor deposition. We observed intensity oscillations corresponding to the completion of each monolayer during layer-by-layer growth. The growth rate was found to be temperature independent and Ga-transport limited. Transitions between step-flow, layer-by-layer, and three-dimensional growth modes were determined as a function of temperature and growth rate. {copyright} {ital 1999 American Institute of Physics.}

Authors:
; ; ; ;  [1];  [2]; ; ;  [3]
  1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
  2. Chemistry Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
  3. Materials Department, University of California, Santa Barbara, California 93106 (United States)
Publication Date:
OSTI Identifier:
341351
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 74; Journal Issue: 22; Other Information: PBD: May 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM COMPOUNDS; GALLIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; EPITAXY; X-RAY DIFFRACTION; GROWTH; ADVANCED PHOTON SOURCE; SURFACE PROPERTIES; SCATTERING

Citation Formats

Stephenson, G.B., Eastman, J.A., Thompson, C., Auciello, O., Thompson, L.J., Munkholm, A., Fini, P., DenBaars, S.P., and Speck, J.S. Observation of growth modes during metal-organic chemical vapor deposition of GaN. United States: N. p., 1999. Web. doi:10.1063/1.123333.
Stephenson, G.B., Eastman, J.A., Thompson, C., Auciello, O., Thompson, L.J., Munkholm, A., Fini, P., DenBaars, S.P., & Speck, J.S. Observation of growth modes during metal-organic chemical vapor deposition of GaN. United States. doi:10.1063/1.123333.
Stephenson, G.B., Eastman, J.A., Thompson, C., Auciello, O., Thompson, L.J., Munkholm, A., Fini, P., DenBaars, S.P., and Speck, J.S. Sat . "Observation of growth modes during metal-organic chemical vapor deposition of GaN". United States. doi:10.1063/1.123333.
@article{osti_341351,
title = {Observation of growth modes during metal-organic chemical vapor deposition of GaN},
author = {Stephenson, G.B. and Eastman, J.A. and Thompson, C. and Auciello, O. and Thompson, L.J. and Munkholm, A. and Fini, P. and DenBaars, S.P. and Speck, J.S.},
abstractNote = {We present real-time surface x-ray scattering measurements during homoepitaxial growth of GaN by metal-organic chemical vapor deposition. We observed intensity oscillations corresponding to the completion of each monolayer during layer-by-layer growth. The growth rate was found to be temperature independent and Ga-transport limited. Transitions between step-flow, layer-by-layer, and three-dimensional growth modes were determined as a function of temperature and growth rate. {copyright} {ital 1999 American Institute of Physics.}},
doi = {10.1063/1.123333},
journal = {Applied Physics Letters},
number = 22,
volume = 74,
place = {United States},
year = {Sat May 01 00:00:00 EDT 1999},
month = {Sat May 01 00:00:00 EDT 1999}
}