Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition
Abstract
Yttria-stabilized zirconia (YSZ) thin films grown by pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate. {copyright} {ital 1999 Materials Research Society.}
- Authors:
-
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States)
- Publication Date:
- OSTI Identifier:
- 337514
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Materials Research
- Additional Journal Information:
- Journal Volume: 14; Journal Issue: 4; Other Information: PBD: Apr 1999
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; YTTRIUM COMPOUNDS; ZIRCONIUM COMPOUNDS; OXYGEN COMPOUNDS; THIN FILMS; YTTRIUM OXIDES; ZIRCONIUM OXIDES; PHYSICAL VAPOR DEPOSITION; EPITAXY; SUBSTRATES; SAPPHIRE; MICROSTRUCTURE; PRESSURE DEPENDENCE
Citation Formats
Dai, J Y, Ong, H C, and Chang, R P. Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition. United States: N. p., 1999.
Web. doi:10.1557/JMR.1999.0181.
Dai, J Y, Ong, H C, & Chang, R P. Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition. United States. https://doi.org/10.1557/JMR.1999.0181
Dai, J Y, Ong, H C, and Chang, R P. 1999.
"Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition". United States. https://doi.org/10.1557/JMR.1999.0181.
@article{osti_337514,
title = {Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition},
author = {Dai, J Y and Ong, H C and Chang, R P},
abstractNote = {Yttria-stabilized zirconia (YSZ) thin films grown by pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate. {copyright} {ital 1999 Materials Research Society.}},
doi = {10.1557/JMR.1999.0181},
url = {https://www.osti.gov/biblio/337514},
journal = {Journal of Materials Research},
number = 4,
volume = 14,
place = {United States},
year = {Thu Apr 01 00:00:00 EST 1999},
month = {Thu Apr 01 00:00:00 EST 1999}
}