Theoretical transport studies of {ital p}-type GaN/AlGaN modulation-doped heterostructures

Journal Article · Thu Apr 01 00:00:00 EST 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.123897· OSTI ID:336603

Hsu, L ^[1]; Walukiewicz, W ^[2]

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1. Center for Innovation in Learning, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)
2. Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

We have calculated hole transfer and low-temperature mobilities in {ital p}-type GaN/AlGaN modulation-doped heterostructures. Although substantial {ital p}-type conduction is difficult to achieve in bulk nitrides, the strain-induced polarization field can greatly enhance the transfer of holes from relatively deep Mg acceptors in the AlGaN barrier into the GaN well. The calculations predict formation of a two-dimensional hole gas with densities greater than 10{sup 12} cm{sup {minus}2} and with low-temperature mobilities in excess of 10{sup 4} cm{sup 2}/Vthinsps. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 336603
• Journal Information: Applied Physics Letters, Vol. 74, Issue 17; Other Information: PBD: Apr 1999
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM COMPOUNDS
ALUMINIUM COMPOUNDS
GALLIUM NITRIDES
ALUMINIUM NITRIDES
TRANSPORT THEORY
HOLE MOBILITY
HETEROJUNCTIONS
STRAINS
MAGNESIUM ADDITIONS
DOPED MATERIALS
ELECTRIC FIELDS
POLARIZATION