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Title: BUSFET - A Novel Radiation-Hardened SOI Transistor

Abstract

A partially-depleted SOI transistor structure has been designed that does not require the use of specially-processed hardened buried oxides for total-dose hardness and maintains the intrinsic SEU and dose rate hardness advantages of SOI technology.

Authors:
; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
3357
Report Number(s):
SAND99-0323C
TRN: US0101399
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: 1999 IEEE Nuclear and Space Radiation Effects Conference (NSREC), Norfolk, VA (US), 07/12/1999--07/16/1999; Other Information: PBD: 4 Feb 1999
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; DOSE RATES; HARDNESS; PHYSICAL RADIATION EFFECTS; TRANSISTORS; RADIATION HARDENING

Citation Formats

Dodd, P.E., Draper, B.L., Schwank, J.R., and Shaneyfelt, M.R.. BUSFET - A Novel Radiation-Hardened SOI Transistor. United States: N. p., 1999. Web.
Dodd, P.E., Draper, B.L., Schwank, J.R., & Shaneyfelt, M.R.. BUSFET - A Novel Radiation-Hardened SOI Transistor. United States.
Dodd, P.E., Draper, B.L., Schwank, J.R., and Shaneyfelt, M.R.. Thu . "BUSFET - A Novel Radiation-Hardened SOI Transistor". United States. https://www.osti.gov/servlets/purl/3357.
@article{osti_3357,
title = {BUSFET - A Novel Radiation-Hardened SOI Transistor},
author = {Dodd, P.E. and Draper, B.L. and Schwank, J.R. and Shaneyfelt, M.R.},
abstractNote = {A partially-depleted SOI transistor structure has been designed that does not require the use of specially-processed hardened buried oxides for total-dose hardness and maintains the intrinsic SEU and dose rate hardness advantages of SOI technology.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Feb 04 00:00:00 EST 1999},
month = {Thu Feb 04 00:00:00 EST 1999}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

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