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Title: Electrochemical formation of field emitters

Abstract

Electrochemical formation of field emitters, particularly useful in the fabrication of flat panel displays is disclosed. The fabrication involves field emitting points in a gated field emitter structure. Metal field emitters are formed by electroplating and the shape of the formed emitter is controlled by the potential imposed on the gate as well as on a separate counter electrode. This allows sharp emitters to be formed in a more inexpensive and manufacturable process than vacuum deposition processes used at present. The fabrication process involves etching of the gate metal and the dielectric layer down to the resistor layer, and then electroplating the etched area and forming an electroplated emitter point in the etched area. 12 figs.

Inventors:
Publication Date:
Research Org.:
University of California
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
335496
Patent Number(s):
US 5,882,503/A/
Application Number:
PAN: 8-847,086
Assignee:
Univ. of California, Oakland, CA (United States) PTO; SCA: 426000; PA: EDB-99:046804; SN: 99002077345
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 16 Mar 1999
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; FIELD EMISSION; DISPLAY DEVICES; FABRICATION; METALS; ELECTROCHEMICAL COATING; ETCHING

Citation Formats

Bernhardt, A.F. Electrochemical formation of field emitters. United States: N. p., 1999. Web.
Bernhardt, A.F. Electrochemical formation of field emitters. United States.
Bernhardt, A.F. Tue . "Electrochemical formation of field emitters". United States.
@article{osti_335496,
title = {Electrochemical formation of field emitters},
author = {Bernhardt, A.F.},
abstractNote = {Electrochemical formation of field emitters, particularly useful in the fabrication of flat panel displays is disclosed. The fabrication involves field emitting points in a gated field emitter structure. Metal field emitters are formed by electroplating and the shape of the formed emitter is controlled by the potential imposed on the gate as well as on a separate counter electrode. This allows sharp emitters to be formed in a more inexpensive and manufacturable process than vacuum deposition processes used at present. The fabrication process involves etching of the gate metal and the dielectric layer down to the resistor layer, and then electroplating the etched area and forming an electroplated emitter point in the etched area. 12 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {3}
}