Process for making a cesiated diamond film field emitter and field emitter formed therefrom

Patent · Tue Mar 30 00:00:00 EST 1999

OSTI ID:335484

Anderson, D F; Kwan, S W

A process for making a cesiated diamond film comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum of between about 10{sup {minus}4} Torr and about 10{sup {minus}7} Torr, (b) increasing the vacuum to at least about 10{sup {minus}8} Torr, and (c) imposing an electron beam upon the diamond film, said electron beam having an energy sufficient to dissociate said cesium iodide and to incorporate cesium into interstices of the diamond film. The cesiated diamond film prepared according to the process has an operating voltage that is reduced by a factor of at least approximately 2.5 relative to conventional, non-cesiated diamond film field emitters. 2 figs.

• Research Organization: Universities Research Association
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC02-76CH03000
• Assignee: Universities Research Association, Inc., Washington, DC (United States)
• Patent Number(s): US 5,888,113/A/
• Application Number: PAN: 8-829,492
• OSTI ID: 335484
• Resource Relation: Other Information: PBD: 30 Mar 1999
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
DIAMONDS
CESIUM IODIDES
FABRICATION
FIELD EMISSION
ELECTRIC POTENTIAL
HIGH VACUUM
ELECTRON BEAMS
DISSOCIATION