Annealing effects on multi-quantum well laser diodes after proton irradiation
- Vanderbilt Univ., Nashville, TN (United States). Electrical and Computer Engineering Dept.
- Univ. of Arizona, Tucson, AZ (United States). Electrical and Computer Engineering Dept.
The threshold current of multi-quantum well laser diodes increased by about 1.5 mA at a proton fluence of 6 {times} 10{sup 12} p/cm{sup 2}. It recovered gradually due to forward-bias annealing at I{sub bias} = 35 mA and became about 0.8 mA less than before irradiation after 86 h of forward bias annealing. At the same time, the optical power at a given bias became greater than before irradiation. There is a fast recovery during the first 100 s after proton irradiation. Increasing the forward bias current during annealing speeds up the annealing process. The degradation of optical power at a proton flux of 1.87 {times} 10{sup 9} p/cm{sup 2}/s (4.7% at a fluence of 6 {times} 10{sup 12} p/cm{sup 2})is less than that at a proton flux of 1.45 {times} 10{sup 10} p/cm{sup 2}/s (10.5% at a fluence of 6 {times} 10{sup 12} p/cm{sup 2}) due to the in-situ forward-bias annealing effects.
- Sponsoring Organization:
- Department of the Air Force, Washington, DC (United States)
- OSTI ID:
- 323962
- Report Number(s):
- CONF-980705-; ISSN 0018-9499; TRN: 99:004482
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 45, Issue 6Pt1; Conference: IEEE nuclear and space radiation effects conference, Newport Beach, CA (United States), 20-24 Jul 1998; Other Information: PBD: Dec 1998
- Country of Publication:
- United States
- Language:
- English
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