Effects of reliability screening tests on bipolar integrated circuits during total dose irradiation
Journal Article
·
· IEEE Transactions on Nuclear Science
- ALCATEL ESPACE, Toulouse (France)
The effects of burn-in, high temperature reverse bias (HTRB) and life test on the total dose response of three different bipolar ICs are studied. Different behaviors have been observed on one type. Results analyses are consistent with the mechanisms previously reported for MOS devices.
- OSTI ID:
- 323941
- Report Number(s):
- CONF-980705-; ISSN 0018-9499; TRN: 99:004461
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 45, Issue 6Pt1; Conference: IEEE nuclear and space radiation effects conference, Newport Beach, CA (United States), 20-24 Jul 1998; Other Information: PBD: Dec 1998
- Country of Publication:
- United States
- Language:
- English
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