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Title: Low temperature processed metal-semiconductor-metal photodetectors on ZnSe/SI-GaAs (100)

Abstract

Low temperature (LT) processed ZnSe MSM photodetectors can be used for detecting gamma rays or X-rays using scintillation crystals in many space and medical applications. Metal-semiconductor-metal (MSM) photodetectors were fabricated on undoped ZnSe grown by molecular beam epitaxy (MBE) on semi-insulating (100) GaAs substrates. The MSM photodetectors consist of interdigitated metal fingers with 2 {micro}m, 3 {micro}m, and 4 {micro}m spacing on one chip. Probimide and SiO{sub 2} thin films were deposited to aid the LT lift-off process before the pattern generation. An interdigitated structure was achieved by photolithography and reactive ion etching. Pd Schottky metal was deposited at a substrate temperature near 77 K using a lift-off technique. The LT metallization provides an improved interface between metal and semiconductor interface. Continuous wave signal to noise ratio (SNR) of 1.57 {times} 10{sup 4} was obtained for 2 {micro}m interdigitated photodetectors, operated under 180 nW optical power at a wavelength of 400 nm. The detectors showed good Dc saturation characteristics indicating a low surface recombination. Saturation current without illumination remained at around less than 1 pA for a {+-} 10 V biasing. Detectors exhibited linearity with light intensity and DC bias voltage suggesting no gain mechanism involved, and showed a highmore » spectral responsivity (0.6 (A/W)) at a wavelength of 450 nm at 5 V applied bias.« less

Authors:
; ; ; ; ;  [1]
  1. State Univ. of New York, Amherst, NY (United States)
Publication Date:
OSTI Identifier:
323891
Report Number(s):
CONF-971201-
Journal ID: ISSN 0272-9172; TRN: 99:004418
Resource Type:
Book
Resource Relation:
Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Semiconductors for room-temperature radiation detector applications 2; James, R.B. [ed.] [Sandia National Labs., Livermore, CA (United States)]; Schlesinger, T.E. [ed.] [Carnegie Mellon Univ., Pittsburgh, PA (United States)]; Siffert, P. [ed.] [Lab. PHASE/CNRS, Strasbourg (France)]; Dusi, W. [ed.] [Inst. TESRE/CNR, Bologna (Italy)]; Squillante, M.R. [ed.] [Radiation Monitoring Devices, Inc., Watertown, MA (United States)]; O`Connell, M. [ed.] [Dept. of Energy, Washington, DC (United States)]; Cuzin, M. [ed.] [LETI/CEA, Grenoble (France)]; PB: 681 p.; Materials Research Society symposium proceedings, Volume 487
Country of Publication:
United States
Language:
English
Subject:
44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; ZINC SELENIDES; PHOTODETECTORS; GAMMA DETECTION; X-RAY DETECTION; SOLID SCINTILLATION DETECTORS; GALLIUM ARSENIDES; DESIGN; EXPERIMENTAL DATA; ELECTRICAL PROPERTIES; SPECTRAL RESPONSE

Citation Formats

Hong, H, Anderson, W A, Lee, E, Chang, H, Na, M, and Luo, H. Low temperature processed metal-semiconductor-metal photodetectors on ZnSe/SI-GaAs (100). United States: N. p., 1998. Web.
Hong, H, Anderson, W A, Lee, E, Chang, H, Na, M, & Luo, H. Low temperature processed metal-semiconductor-metal photodetectors on ZnSe/SI-GaAs (100). United States.
Hong, H, Anderson, W A, Lee, E, Chang, H, Na, M, and Luo, H. 1998. "Low temperature processed metal-semiconductor-metal photodetectors on ZnSe/SI-GaAs (100)". United States.
@article{osti_323891,
title = {Low temperature processed metal-semiconductor-metal photodetectors on ZnSe/SI-GaAs (100)},
author = {Hong, H and Anderson, W A and Lee, E and Chang, H and Na, M and Luo, H},
abstractNote = {Low temperature (LT) processed ZnSe MSM photodetectors can be used for detecting gamma rays or X-rays using scintillation crystals in many space and medical applications. Metal-semiconductor-metal (MSM) photodetectors were fabricated on undoped ZnSe grown by molecular beam epitaxy (MBE) on semi-insulating (100) GaAs substrates. The MSM photodetectors consist of interdigitated metal fingers with 2 {micro}m, 3 {micro}m, and 4 {micro}m spacing on one chip. Probimide and SiO{sub 2} thin films were deposited to aid the LT lift-off process before the pattern generation. An interdigitated structure was achieved by photolithography and reactive ion etching. Pd Schottky metal was deposited at a substrate temperature near 77 K using a lift-off technique. The LT metallization provides an improved interface between metal and semiconductor interface. Continuous wave signal to noise ratio (SNR) of 1.57 {times} 10{sup 4} was obtained for 2 {micro}m interdigitated photodetectors, operated under 180 nW optical power at a wavelength of 400 nm. The detectors showed good Dc saturation characteristics indicating a low surface recombination. Saturation current without illumination remained at around less than 1 pA for a {+-} 10 V biasing. Detectors exhibited linearity with light intensity and DC bias voltage suggesting no gain mechanism involved, and showed a high spectral responsivity (0.6 (A/W)) at a wavelength of 450 nm at 5 V applied bias.},
doi = {},
url = {https://www.osti.gov/biblio/323891}, journal = {},
issn = {0272-9172},
number = ,
volume = ,
place = {United States},
year = {Thu Dec 31 00:00:00 EST 1998},
month = {Thu Dec 31 00:00:00 EST 1998}
}

Book:
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