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Title: Improved CdZnTe detectors grown by vertical Bridgman process

Abstract

The {gamma} ray ({sup 57}Co) and {alpha} particle ({sup 241}Am) detector response of Cd{sub 1{minus}x}Zn{sub x}Te crystals grown by vertical Bridgman technique was studied under both positive and negative bias conditions. Post-growth processing was utilized to produce a high-resistivity material with improved charge-collection properties. Samples of various Zn concentrations were investigated by I-V measurements and thermally stimulated spectroscopies to determine the ionization energies of deep levels in the band gap. When the post-processing conditions were optimized the low-energy tailing of the {gamma}-ray photopeaks was significantly reduced and an energy resolution of under 5% was achieved for the 122 keV {gamma}-photon line in crystals with x = 0.2 Zn content at room temperature. A peak to background ratio of 14:1 for the 122 keV photopeak from {sup 57}Co was observed on the best sample, using a standard planar detection geometry. The low-energy 14.4 keV X-ray line could also be observed and distinguished from the noise.

Authors:
;  [1]; ;  [2];  [3]
  1. Washington State Univ., Pullman, WA (United States). Dept. of Physics
  2. Johnson Matthey Electronics, Spokane, WA (United States)
  3. II-VI, Inc., Saxonburg, PA (United States). eV Products Div.
Publication Date:
OSTI Identifier:
323850
Report Number(s):
CONF-971201-
Journal ID: ISSN 0272-9172; TRN: 99:004382
Resource Type:
Book
Resource Relation:
Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Semiconductors for room-temperature radiation detector applications 2; James, R.B. [ed.] [Sandia National Labs., Livermore, CA (United States)]; Schlesinger, T.E. [ed.] [Carnegie Mellon Univ., Pittsburgh, PA (United States)]; Siffert, P. [ed.] [Lab. PHASE/CNRS, Strasbourg (France)]; Dusi, W. [ed.] [Inst. TESRE/CNR, Bologna (Italy)]; Squillante, M.R. [ed.] [Radiation Monitoring Devices, Inc., Watertown, MA (United States)]; O`Connell, M. [ed.] [Dept. of Energy, Washington, DC (United States)]; Cuzin, M. [ed.] [LETI/CEA, Grenoble (France)]; PB: 681 p.; Materials Research Society symposium proceedings, Volume 487
Country of Publication:
United States
Language:
English
Subject:
44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; CADMIUM TELLURIDES; ZINC TELLURIDES; SEMICONDUCTOR DETECTORS; BRIDGMAN METHOD; RESPONSE FUNCTIONS; GAMMA DETECTION; ALPHA DETECTION; PERFORMANCE; AMBIENT TEMPERATURE; EXPERIMENTAL DATA

Citation Formats

Lynn, K G, Weber, M, Glass, H L, Flint, J P, and Szeles, C. Improved CdZnTe detectors grown by vertical Bridgman process. United States: N. p., 1998. Web.
Lynn, K G, Weber, M, Glass, H L, Flint, J P, & Szeles, C. Improved CdZnTe detectors grown by vertical Bridgman process. United States.
Lynn, K G, Weber, M, Glass, H L, Flint, J P, and Szeles, C. Thu . "Improved CdZnTe detectors grown by vertical Bridgman process". United States.
@article{osti_323850,
title = {Improved CdZnTe detectors grown by vertical Bridgman process},
author = {Lynn, K G and Weber, M and Glass, H L and Flint, J P and Szeles, C},
abstractNote = {The {gamma} ray ({sup 57}Co) and {alpha} particle ({sup 241}Am) detector response of Cd{sub 1{minus}x}Zn{sub x}Te crystals grown by vertical Bridgman technique was studied under both positive and negative bias conditions. Post-growth processing was utilized to produce a high-resistivity material with improved charge-collection properties. Samples of various Zn concentrations were investigated by I-V measurements and thermally stimulated spectroscopies to determine the ionization energies of deep levels in the band gap. When the post-processing conditions were optimized the low-energy tailing of the {gamma}-ray photopeaks was significantly reduced and an energy resolution of under 5% was achieved for the 122 keV {gamma}-photon line in crystals with x = 0.2 Zn content at room temperature. A peak to background ratio of 14:1 for the 122 keV photopeak from {sup 57}Co was observed on the best sample, using a standard planar detection geometry. The low-energy 14.4 keV X-ray line could also be observed and distinguished from the noise.},
doi = {},
journal = {},
issn = {0272-9172},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {12}
}

Book:
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