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Title: Elementary analysis of line shapes and energy resolution in semiconductor radiation detectors

Abstract

The authors have used an elementary statistical technique to derive a closed-form expression for the hole-tailing line shape produced by photoelectric absorption of monoenergetic radiation in a semiconductor X-ray/{gamma}-ray detector. In the case of compound semiconductors, where the drift length for electrons is much greater than that for holes, the line shape is given by a type of power law, except for a small region very near the photopeak. This analytical result agrees well with Monte Carlo simulations and is used to extract approximate {mu}{tau} products from a {sup 57}Co pulse height spectrum. They also present an expression for the maximum obtainable energy resolution of a semiconductor detector in the presence of leakage current noise and intrinsic statistical fluctuations as a function of material parameters, along with a chart of the optimal band gap as a function of temperature and photon energy. Based on these considerations, the optimal band gap for room-temperature operation is approximately 2.0 eV.

Authors:
; ;  [1];  [2]
  1. Carnegie Mellon Univ., Pittsburgh, PA (United States)
  2. Sandia National Labs., Livermore, CA (United States)
Publication Date:
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
323844
Report Number(s):
CONF-971201-
Journal ID: ISSN 0272-9172; TRN: 99:004376
Resource Type:
Conference
Resource Relation:
Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Semiconductors for room-temperature radiation detector applications 2; James, R.B. [ed.] [Sandia National Labs., Livermore, CA (United States)]; Schlesinger, T.E. [ed.] [Carnegie Mellon Univ., Pittsburgh, PA (United States)]; Siffert, P. [ed.] [Lab. PHASE/CNRS, Strasbourg (France)]; Dusi, W. [ed.] [Inst. TESRE/CNR, Bologna (Italy)]; Squillante, M.R. [ed.] [Radiation Monitoring Devices, Inc., Watertown, MA (United States)]; O`Connell, M. [ed.] [Dept. of Energy, Washington, DC (United States)]; Cuzin, M. [ed.] [LETI/CEA, Grenoble (France)]; PB: 681 p.; Materials Research Society symposium proceedings, Volume 487
Country of Publication:
United States
Language:
English
Subject:
44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; GAMMA DETECTION; X-RAY DETECTION; SEMICONDUCTOR DETECTORS; CADMIUM TELLURIDES; ZINC TELLURIDES; CARRIER MOBILITY; ENERGY RESOLUTION; ENERGY GAP; AMBIENT TEMPERATURE

Citation Formats

Toney, J E, Schlesinger, T E, Brunett, B A, and James, R B. Elementary analysis of line shapes and energy resolution in semiconductor radiation detectors. United States: N. p., 1998. Web.
Toney, J E, Schlesinger, T E, Brunett, B A, & James, R B. Elementary analysis of line shapes and energy resolution in semiconductor radiation detectors. United States.
Toney, J E, Schlesinger, T E, Brunett, B A, and James, R B. Thu . "Elementary analysis of line shapes and energy resolution in semiconductor radiation detectors". United States.
@article{osti_323844,
title = {Elementary analysis of line shapes and energy resolution in semiconductor radiation detectors},
author = {Toney, J E and Schlesinger, T E and Brunett, B A and James, R B},
abstractNote = {The authors have used an elementary statistical technique to derive a closed-form expression for the hole-tailing line shape produced by photoelectric absorption of monoenergetic radiation in a semiconductor X-ray/{gamma}-ray detector. In the case of compound semiconductors, where the drift length for electrons is much greater than that for holes, the line shape is given by a type of power law, except for a small region very near the photopeak. This analytical result agrees well with Monte Carlo simulations and is used to extract approximate {mu}{tau} products from a {sup 57}Co pulse height spectrum. They also present an expression for the maximum obtainable energy resolution of a semiconductor detector in the presence of leakage current noise and intrinsic statistical fluctuations as a function of material parameters, along with a chart of the optimal band gap as a function of temperature and photon energy. Based on these considerations, the optimal band gap for room-temperature operation is approximately 2.0 eV.},
doi = {},
journal = {},
issn = {0272-9172},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {12}
}

Conference:
Other availability
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