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Title: Optical studies of the internal electric field distributions of CdZnTe detectors under bias conditions

Book ·
OSTI ID:323825
 [1]; ; ;  [2]
  1. Univ. of Nebraska, Lincoln, NE (United States)
  2. Sandia National Labs., Livermore, CA (United States)

The internal electric field distributions of the CdZnTe (CZT) detectors under bias were characterized by optical polarized transmission at a 952 nm illumination utilizing the Pockels electro-optic effect. Two-dimensional (2D) images mapping the internal electrical field intensity changes were obtained to study the performance of CZT room-temperature radiation detectors. Planar and a P-I-N structured CZT detectors were investigated under different operating bias voltages. Analysis of optical profiles from a planar single crystal detector provides a quantitative nondestructive description of the electric field or voltage distributions inside a radiation detector. The P-I-N structured CZT detector showed a nearly uniform electric field in a width which varied with the operating bias voltage. An energy-band model of a semiconductor junction with a depletion layer was employed to understand the results.

Sponsoring Organization:
USDOE, Washington, DC (United States)
OSTI ID:
323825
Report Number(s):
CONF-971201-; TRN: 99:004357
Resource Relation:
Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Semiconductors for room-temperature radiation detector applications 2; James, R.B. [ed.] [Sandia National Labs., Livermore, CA (United States)]; Schlesinger, T.E. [ed.] [Carnegie Mellon Univ., Pittsburgh, PA (United States)]; Siffert, P. [ed.] [Lab. PHASE/CNRS, Strasbourg (France)]; Dusi, W. [ed.] [Inst. TESRE/CNR, Bologna (Italy)]; Squillante, M.R. [ed.] [Radiation Monitoring Devices, Inc., Watertown, MA (United States)]; O`Connell, M. [ed.] [Dept. of Energy, Washington, DC (United States)]; Cuzin, M. [ed.] [LETI/CEA, Grenoble (France)]; PB: 681 p.; Materials Research Society symposium proceedings, Volume 487
Country of Publication:
United States
Language:
English