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Title: Mapping large area cadmium zinc telluride (CZT) wafers: Apparatus and method

Abstract

Cadmium Zinc Telluride (CZT) shows great promise as a semiconductor radiation detector material. CZT possesses advantageous material properties over other radiation detector materials in use today, such as a high intrinsic resistivity and a high cross-section for x and {gamma}-rays. However, presently available CZT is not without limitations. The hole transport properties severely limit the performance of these detectors, and the yield of material possessing adequate electron transport properties is currently much lower than desired. The result of these material deficiencies is a lack of inexpensive CZT crystals of large volume for several radiation detector applications. One approach to help alleviate this problem is to measure the spatial distribution (or map) the electrical properties of large area CZT wafers prior to device fabrication. This mapping can accomplish two goals: identify regions of the wafers suitable for detector fabrication and correlate the distribution of crystalline defects with the detector performance. The results of this characterization can then be used by the crystal manufacturers to optimize their growth processes. In this work, the authors discuss the design and performance of apparatus for measuring the electrical characteristics of entire CZT wafers (up to 10 cm x 10 cm). The data acquisition and manipulationmore » will be discussed and some typical data will be presented.« less

Authors:
 [1];  [2]; ;  [3];  [4]; ;  [1]
  1. Sandia National Labs., Livermore, CA (United States)
  2. Sandia National Labs. Livermore, CA (United States)
  3. Univ. of California, Los Angeles, CA (United States)
  4. Carnegie Mellon Univ., Pittsburgh, PA (United States)
Publication Date:
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
323823
Report Number(s):
CONF-971201-
Journal ID: ISSN 0272-9172; TRN: 99:004355
Resource Type:
Conference
Resource Relation:
Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Semiconductors for room-temperature radiation detector applications 2; James, R.B. [ed.] [Sandia National Labs., Livermore, CA (United States)]; Schlesinger, T.E. [ed.] [Carnegie Mellon Univ., Pittsburgh, PA (United States)]; Siffert, P. [ed.] [Lab. PHASE/CNRS, Strasbourg (France)]; Dusi, W. [ed.] [Inst. TESRE/CNR, Bologna (Italy)]; Squillante, M.R. [ed.] [Radiation Monitoring Devices, Inc., Watertown, MA (United States)]; O`Connell, M. [ed.] [Dept. of Energy, Washington, DC (United States)]; Cuzin, M. [ed.] [LETI/CEA, Grenoble (France)]; PB: 681 p.; Materials Research Society symposium proceedings, Volume 487
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; CADMIUM TELLURIDES; ZINC TELLURIDES; SEMICONDUCTOR DETECTORS; X-RAY DETECTION; GAMMA DETECTION; ELECTRICAL PROPERTIES; CRYSTAL DEFECTS; PERFORMANCE; MATERIALS TESTING

Citation Formats

Brunett, B A, Carnegie Mellon Univ., Pittsburgh, PA, Scyoc, J.M. van, Univ. of California, Los Angeles, CA, Yoon, H, Gilbert, T S, Schlesinger, T E, Lund, J C, and James, R B. Mapping large area cadmium zinc telluride (CZT) wafers: Apparatus and method. United States: N. p., 1998. Web.
Brunett, B A, Carnegie Mellon Univ., Pittsburgh, PA, Scyoc, J.M. van, Univ. of California, Los Angeles, CA, Yoon, H, Gilbert, T S, Schlesinger, T E, Lund, J C, & James, R B. Mapping large area cadmium zinc telluride (CZT) wafers: Apparatus and method. United States.
Brunett, B A, Carnegie Mellon Univ., Pittsburgh, PA, Scyoc, J.M. van, Univ. of California, Los Angeles, CA, Yoon, H, Gilbert, T S, Schlesinger, T E, Lund, J C, and James, R B. Thu . "Mapping large area cadmium zinc telluride (CZT) wafers: Apparatus and method". United States.
@article{osti_323823,
title = {Mapping large area cadmium zinc telluride (CZT) wafers: Apparatus and method},
author = {Brunett, B A and Carnegie Mellon Univ., Pittsburgh, PA and Scyoc, J.M. van and Univ. of California, Los Angeles, CA and Yoon, H and Gilbert, T S and Schlesinger, T E and Lund, J C and James, R B},
abstractNote = {Cadmium Zinc Telluride (CZT) shows great promise as a semiconductor radiation detector material. CZT possesses advantageous material properties over other radiation detector materials in use today, such as a high intrinsic resistivity and a high cross-section for x and {gamma}-rays. However, presently available CZT is not without limitations. The hole transport properties severely limit the performance of these detectors, and the yield of material possessing adequate electron transport properties is currently much lower than desired. The result of these material deficiencies is a lack of inexpensive CZT crystals of large volume for several radiation detector applications. One approach to help alleviate this problem is to measure the spatial distribution (or map) the electrical properties of large area CZT wafers prior to device fabrication. This mapping can accomplish two goals: identify regions of the wafers suitable for detector fabrication and correlate the distribution of crystalline defects with the detector performance. The results of this characterization can then be used by the crystal manufacturers to optimize their growth processes. In this work, the authors discuss the design and performance of apparatus for measuring the electrical characteristics of entire CZT wafers (up to 10 cm x 10 cm). The data acquisition and manipulation will be discussed and some typical data will be presented.},
doi = {},
journal = {},
issn = {0272-9172},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {12}
}

Conference:
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