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Title: Effects of back contact treatments on junction photoluminescence in CdTe/CdS solar cells

Abstract

Device performance in CdTe/CdS solar cells is critically linked to the quality of the back contact. In this paper the authors report on a phenomenon wherein application of the back contact significantly alters the electro-optical properties of the absorber near the junction. They have studied the photoluminescence (PL) spectrum of the near-junction CdTe region in CdTe/CdS solar cells before and after contact application. It is found that the elemental Tellurium layer formed on the CdTe surface by the standard nitric-phosphoric etch process results in a dramatic qualitative change in the junction PL spectrum. Prior to NP etch, the spectrum has two peaks at energies of 1.50 eV and 1.45 eV, corresponding to recombination in bulk CdTe, and in a CdTeS alloy with 9% sulfur content, respectively. After NP etch, the relative intensity of the low-energy peak is reduced, and the peak shifts towards higher energy. These changes are consistent with a model of increased band-bending at the grain boundaries near the CdTe/CdS heterojunction.

Authors:
; ; ; ; ; ; ;  [1];  [2]
  1. National Renewable Energy Lab., Golden, CO (United States)
  2. Colorado State Univ., Ft. Collins, CO (United States)
Publication Date:
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
323665
Report Number(s):
CONF-971201-
Journal ID: ISSN 0272-9172; TRN: IM9911%%279
DOE Contract Number:  
AC36-83CH10093
Resource Type:
Conference
Resource Relation:
Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Thin-film structures for photovoltaics; Jones, E.D. [ed.] [Sandia National Labs., Albuquerque, NM (United States)]; Kalejs, J. [ed.] [ASE Americas Inc., Billerica, MA (United States)]; Noufi, R.; Sopori, B. [eds.] [National Renewable Energy Lab., Golden, CO (United States)]; PB: 325 p.; Materials Research Society symposium proceedings, Volume 485
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CADMIUM TELLURIDE SOLAR CELLS; PHOTOLUMINESCENCE; CADMIUM SULFIDES; ELECTRIC CONTACTS; PERFORMANCE; ELECTRICAL PROPERTIES; OPTICAL PROPERTIES; CADMIUM TELLURIDES; ETCHING; MODIFICATIONS

Citation Formats

Levi, D H, Albin, D S, Gessert, T A, Niles, D W, Swartzlander, A, Rose, D H, Ahrenkiel, R K, Sheldon, P, and Woods, L M. Effects of back contact treatments on junction photoluminescence in CdTe/CdS solar cells. United States: N. p., 1998. Web.
Levi, D H, Albin, D S, Gessert, T A, Niles, D W, Swartzlander, A, Rose, D H, Ahrenkiel, R K, Sheldon, P, & Woods, L M. Effects of back contact treatments on junction photoluminescence in CdTe/CdS solar cells. United States.
Levi, D H, Albin, D S, Gessert, T A, Niles, D W, Swartzlander, A, Rose, D H, Ahrenkiel, R K, Sheldon, P, and Woods, L M. Thu . "Effects of back contact treatments on junction photoluminescence in CdTe/CdS solar cells". United States.
@article{osti_323665,
title = {Effects of back contact treatments on junction photoluminescence in CdTe/CdS solar cells},
author = {Levi, D H and Albin, D S and Gessert, T A and Niles, D W and Swartzlander, A and Rose, D H and Ahrenkiel, R K and Sheldon, P and Woods, L M},
abstractNote = {Device performance in CdTe/CdS solar cells is critically linked to the quality of the back contact. In this paper the authors report on a phenomenon wherein application of the back contact significantly alters the electro-optical properties of the absorber near the junction. They have studied the photoluminescence (PL) spectrum of the near-junction CdTe region in CdTe/CdS solar cells before and after contact application. It is found that the elemental Tellurium layer formed on the CdTe surface by the standard nitric-phosphoric etch process results in a dramatic qualitative change in the junction PL spectrum. Prior to NP etch, the spectrum has two peaks at energies of 1.50 eV and 1.45 eV, corresponding to recombination in bulk CdTe, and in a CdTeS alloy with 9% sulfur content, respectively. After NP etch, the relative intensity of the low-energy peak is reduced, and the peak shifts towards higher energy. These changes are consistent with a model of increased band-bending at the grain boundaries near the CdTe/CdS heterojunction.},
doi = {},
url = {https://www.osti.gov/biblio/323665}, journal = {},
issn = {0272-9172},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {12}
}

Conference:
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