Characterization of Cu(In,Ga)Se{sub 2}/Mo interface in CIGS solar cells
- Matsushita Electric Industrial Co., Ltd., Kyoto (Japan). Central Research Labs.
The interface between a Cu(In,Ga)Se{sub 2} (CIGS) and an underlying Mo layer was studied by X-ray diffraction and high resolution transmission electron microscopy. The CIGS layer was deposited onto Mo coated soda-lime glass using the 3-stage process. A MoSe{sub 2} layer found to form at the CIGS/Mo interface during the 2nd stage of the 3-stage process. The thickness of the MoSe{sub 2} layer depended on the substrate temperature used for CIGS film deposition as well as the Na content of the CIGS and/or Mo layers. For higher substrate temperatures, thicker MoSe{sub 2} layers were observed. The Na in the CIGS and/or Mo layer is felt to assist in the formation of MoSe{sub 2}. Current-Voltage measurements of the heterojunction formed by the CIGS/Mo interface were ohmic even at low temperature. The role of the MoSe{sub 2} layer in high efficiency CIGS solar cells is discussed.
- Sponsoring Organization:
- New Energy and Industrial Technology Development Organization, Tokyo (Japan)
- OSTI ID:
- 323653
- Report Number(s):
- CONF-971201-; TRN: IM9911%%267
- Resource Relation:
- Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Thin-film structures for photovoltaics; Jones, E.D. [ed.] [Sandia National Labs., Albuquerque, NM (United States)]; Kalejs, J. [ed.] [ASE Americas Inc., Billerica, MA (United States)]; Noufi, R.; Sopori, B. [eds.] [National Renewable Energy Lab., Golden, CO (United States)]; PB: 325 p.; Materials Research Society symposium proceedings, Volume 485
- Country of Publication:
- United States
- Language:
- English
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