In-situ UHV TEM investigations of the initial oxidation stage of copper thin films
- Univ. of Illinois, Urbana, IL (United States). Frederick Seitz Materials Research Lab.
- Univ. of California, Santa Barbara, CA (United States). Dept. of Physics
The nucleation and growth of Cu{sub 2}O due to oxidation o Cu(001) films were monitored at various temperatures an oxygen partial pressures. For all examined temperatures and pressures, Cu{sub 2}O islands were observed to form epitaxially with respect to the copper film. The nucleation of these oxide islands was homogeneous--no clear evidence was observed for either steps or dislocations being preferential nucleation sites. Based on this data, the authors have developed a semiquantitative model of the initial oxidation stage where the dominant mechanism for transport, nucleation and growth of oxide islands in oxygen diffusion on the Cu surface. The authors are presently comparing their experimental data with nucleation rate theory, where the predictions qualitatively describe their observations, but not quantitatively.
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- FG02-91ER45439
- OSTI ID:
- 323514
- Report Number(s):
- CONF-971201-; TRN: IM9911%%128
- Resource Relation:
- Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Phase transformations and systems driven far from equilibrium; Ma, E. [ed.] [Louisiana State Univ., Baton Rouge, LA (United States)]; Atzmon, M. [ed.] [Univ. of Michigan, Ann Arbor, MI (United States)]; Bellon, P. [ed.] [Univ. of Illinois, Urbana, IL (United States)]; Trivedi, R. [ed.] [Ames Lab., IA (United States)]|[Iowa State Univ., Ames, IA (United States)]; PB: 703 p.; Materials Research Society symposium proceedings, Volume 481
- Country of Publication:
- United States
- Language:
- English
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