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Title: In-plane grain boundary effects on the transport properties of La{sub 0.7}Sr{sub 0.3}MnO{sub 3{minus}{delta}} thin films

Book ·
OSTI ID:323420
 [1]; ; ; ;  [1]; ; ;  [2];  [3]
  1. Univ. of Maryland, College Park, MD (United States)
  2. National Center for Electron Microscopy, Berkeley, CA (United States)
  3. Seoul National Univ. (Korea, Republic of). Dept. of Physics

C-axis oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3{minus}{delta}} (LSMO) films were fabricated on the top of SrTiO{sub 3}/YBa{sub 2}Cu{sub 3}O{sub 7} grown on MgO(001) substrates. From x-ray {phi}-scan and planar transmission electron microscopy measurements, the LSMO layer in the LSMO/SrTiO{sub 3}/YBa{sub 2}Cu{sub 3}O{sub 7}/MgO heterostructure is found to have coherent in -plane grain boundaries with a predominance of 45{degree} rotations (between [100] and [110] grains) in addition to the cube-on-cube epitaxial relationship. Also, epitaxial LSMO/Bi{sub 4}Ti{sub 3}O{sub 12}/LaAlO{sub 3} (001) and c-axis textured LSMO/Bi{sub 4}Ti{sub 3}O{sub 12}/SiO{sub 2}/Si(001) with random in-plane grain boundaries are introduced as the counterparts for comparison. The resistivity and magnetoresistance (MR) of LSMO layer were measured and compared in these three different heterostructures. The low field MR at low temperature shows a dramatic dependence on the nature of the grain boundary. An attempt is made to interpret these results on the basis of correlation between the magnetic properties and grain structures.

Sponsoring Organization:
Office of Naval Research, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
OSTI ID:
323420
Report Number(s):
CONF-971201-; ISBN 1-55899-399-1; TRN: 99:004242
Resource Relation:
Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Science and technology of magnetic oxides; Hundley, M.F. [ed.] [Los Alamos National Lab., NM (United States)]; Nickel, J.H. [ed.] [Hewlett-Packard Labs., Palo Alto, CA (United States)]; Ramesh, R. [ed.] [Univ. of Maryland, College Park, MA (United States)]; Tokura, Yoshinori [ed.] [Univ. of Tokyo (Japan)]; PB: 375 p.; Materials Research Society symposium proceedings, Volume 494
Country of Publication:
United States
Language:
English