Thin film growth and magnetotransport study of (La,Sr)MnO{sub 3}
Abstract
Thin-film samples of La{sub 1{minus}x}Sr{sub x}MnO{sub 3} (x = 0.20--0.30) were grown by pulsed-laser deposition using various target compositions, substrate materials, growth temperatures, oxygen partial pressures, and laser-pulse repetition rates. The crystal structure and the transport and magnetic properties of these films were then examined. Of the growth conditions, the oxygen partial pressure (P{sub O{sub 2}}) had the greatest influence on the electrical and magnetic properties. Films grown under a low P{sub O{sub 2}} had a low ferromagnetic transition temperature ({Tc}) and a wide resistive transition width. None of the heat treatments done after growth improved these films` quality. The film morphology was significantly affected by the substrate material. The x-ray diffraction analysis and AFM measurements revealed that the films deposited on both MgO (100) and LaAlO{sub 3} (100) were epitaxially grown but contained defect structures. In contrast, grain-free thin films were epitaxially grown on the SrTiO{sub 3} (100) substrates. The surface roughness of films grown on SrTiO{sub 3} was less than 0.3 nm, even for films up to 150 nm thick. Under optimized growth conditions, as-deposited films for x {ge} 0.2 showed a sharp transition in resistivity at {Tc}. Magnetoresistance at far below {Tc} was as low as thatmore »
- Authors:
-
- NEC Corp., Tsukuba, Ibaraki (Japan). Fundamental Research Labs.
- Publication Date:
- OSTI Identifier:
- 323390
- Report Number(s):
- CONF-971201-
ISBN 1-55899-399-1; TRN: 99:004223
- Resource Type:
- Book
- Resource Relation:
- Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Science and technology of magnetic oxides; Hundley, M.F. [ed.] [Los Alamos National Lab., NM (United States)]; Nickel, J.H. [ed.] [Hewlett-Packard Labs., Palo Alto, CA (United States)]; Ramesh, R. [ed.] [Univ. of Maryland, College Park, MA (United States)]; Tokura, Yoshinori [ed.] [Univ. of Tokyo (Japan)]; PB: 375 p.; Materials Research Society symposium proceedings, Volume 494
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; MAGNETORESISTANCE; VAPOR PHASE EPITAXY; LANTHANUM OXIDES; STRONTIUM OXIDES; MANGANESE OXIDES; LASERS; THIN FILMS; TEMPERATURE DEPENDENCE; X-RAY DIFFRACTION; EXPERIMENTAL DATA
Citation Formats
Manako, Takashi, Obata, Takeshi, Shimakawa, Yuichi, and Kubo, Yoshimi. Thin film growth and magnetotransport study of (La,Sr)MnO{sub 3}. United States: N. p., 1998.
Web.
Manako, Takashi, Obata, Takeshi, Shimakawa, Yuichi, & Kubo, Yoshimi. Thin film growth and magnetotransport study of (La,Sr)MnO{sub 3}. United States.
Manako, Takashi, Obata, Takeshi, Shimakawa, Yuichi, and Kubo, Yoshimi. 1998.
"Thin film growth and magnetotransport study of (La,Sr)MnO{sub 3}". United States.
@article{osti_323390,
title = {Thin film growth and magnetotransport study of (La,Sr)MnO{sub 3}},
author = {Manako, Takashi and Obata, Takeshi and Shimakawa, Yuichi and Kubo, Yoshimi},
abstractNote = {Thin-film samples of La{sub 1{minus}x}Sr{sub x}MnO{sub 3} (x = 0.20--0.30) were grown by pulsed-laser deposition using various target compositions, substrate materials, growth temperatures, oxygen partial pressures, and laser-pulse repetition rates. The crystal structure and the transport and magnetic properties of these films were then examined. Of the growth conditions, the oxygen partial pressure (P{sub O{sub 2}}) had the greatest influence on the electrical and magnetic properties. Films grown under a low P{sub O{sub 2}} had a low ferromagnetic transition temperature ({Tc}) and a wide resistive transition width. None of the heat treatments done after growth improved these films` quality. The film morphology was significantly affected by the substrate material. The x-ray diffraction analysis and AFM measurements revealed that the films deposited on both MgO (100) and LaAlO{sub 3} (100) were epitaxially grown but contained defect structures. In contrast, grain-free thin films were epitaxially grown on the SrTiO{sub 3} (100) substrates. The surface roughness of films grown on SrTiO{sub 3} was less than 0.3 nm, even for films up to 150 nm thick. Under optimized growth conditions, as-deposited films for x {ge} 0.2 showed a sharp transition in resistivity at {Tc}. Magnetoresistance at far below {Tc} was as low as that reported for single-crystal sample. Since large magnetoresistance was often observed in polycrystalline samples and believed to be a grain boundary effect, these results indicate the high quality of the films grown on the SrTiO{sub 3} substrates.},
doi = {},
url = {https://www.osti.gov/biblio/323390},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Dec 31 00:00:00 EST 1998},
month = {Thu Dec 31 00:00:00 EST 1998}
}