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Title: Stability of Trapped Electrons in SiO(2)

Abstract

Thermally stimulated current and capacitance voltage methods are used to investigate the thermal stability of trapped electrons associated with radiation-induced trapped positive charge in metal-oxide-semiconductor capacitors. The density of deeply trapped electrons in radiation-hardened 45 nm oxides exceeds that of shallow electrons by a factor of {approximately}3 after radiation exposure, and by up to a factor of 10 or more during biased annealing. Shallow electron traps anneal faster than deep traps, and seem to be at least qualitatively consistent with the model of Lelis et al. Deeper traps maybe part of a fundamentally distinct dipole complex, and/or have shifted energy levels that inhibit charge exchange with the Si.

Authors:
;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
3229
Report Number(s):
SAND99-0254J
TRN: US0101397
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Other Information: Submitted to Applied Physics Letters; PBD: 29 Jan 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON OXIDES; CHARGE EXCHANGE; ENERGY LEVELS; STABILITY; TRAPPED ELECTRONS; CAPACITORS; RADIATION HARDENING

Citation Formats

Fleetwood, D.M., and Winokur, P.S. Stability of Trapped Electrons in SiO(2). United States: N. p., 1999. Web. doi:10.1063/1.123982.
Fleetwood, D.M., & Winokur, P.S. Stability of Trapped Electrons in SiO(2). United States. doi:10.1063/1.123982.
Fleetwood, D.M., and Winokur, P.S. Fri . "Stability of Trapped Electrons in SiO(2)". United States. doi:10.1063/1.123982. https://www.osti.gov/servlets/purl/3229.
@article{osti_3229,
title = {Stability of Trapped Electrons in SiO(2)},
author = {Fleetwood, D.M. and Winokur, P.S.},
abstractNote = {Thermally stimulated current and capacitance voltage methods are used to investigate the thermal stability of trapped electrons associated with radiation-induced trapped positive charge in metal-oxide-semiconductor capacitors. The density of deeply trapped electrons in radiation-hardened 45 nm oxides exceeds that of shallow electrons by a factor of {approximately}3 after radiation exposure, and by up to a factor of 10 or more during biased annealing. Shallow electron traps anneal faster than deep traps, and seem to be at least qualitatively consistent with the model of Lelis et al. Deeper traps maybe part of a fundamentally distinct dipole complex, and/or have shifted energy levels that inhibit charge exchange with the Si.},
doi = {10.1063/1.123982},
journal = {Applied Physics Letters},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}