Process for forming silicon carbide films and microcomponents
Patent
·
OSTI ID:321303
Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.
- Research Organization:
- Univ. of California (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- Univ. of California, Oakland, CA (United States)
- Patent Number(s):
- US 5,861,346/A/
- Application Number:
- PAN: 8-507,916
- OSTI ID:
- 321303
- Resource Relation:
- Other Information: PBD: 19 Jan 1999
- Country of Publication:
- United States
- Language:
- English
Similar Records
Process for forming silicon carbide films and microcomponents
SiC microcomponents via reaction of C[sub 60] with silicon
High-temperature mixed oxidation of nitride-bonded silicon carbide in oxidizing gas mixtures containing 2% Cl{sub 2}
Patent
·
Fri Jan 01 00:00:00 EST 1999
·
OSTI ID:321303
SiC microcomponents via reaction of C[sub 60] with silicon
Journal Article
·
Tue Nov 01 00:00:00 EST 1994
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
·
OSTI ID:321303
High-temperature mixed oxidation of nitride-bonded silicon carbide in oxidizing gas mixtures containing 2% Cl{sub 2}
Journal Article
·
Sat Apr 01 00:00:00 EST 1995
· Journal of the American Ceramic Society
·
OSTI ID:321303