Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures
Patent
·
OSTI ID:321182
A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.
- Research Organization:
- Sandia Corporation
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000;
- Assignee:
- SNL; 360601; 426000; SCA: 360606; SN: 99002058529; PA: EDB-99:030846
- Patent Number(s):
- US 5,840,620/A/
- Application Number:
- PAN: 8-577,851
- OSTI ID:
- 321182
- Country of Publication:
- United States
- Language:
- English
Similar Records
Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures
High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition
Wet-chemical processing of tin-doped indium oxide layers
Patent
·
1997
·
OSTI ID:871994
High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition
Journal Article
·
2016
· AIP Advances
·
OSTI ID:22611560
Wet-chemical processing of tin-doped indium oxide layers
Conference
·
1994
·
OSTI ID:51603