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Title: OMVPE growth of GaInAsSb in the 2 to 2.4 {micro}m range

Abstract

Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy using all organometallic precursors, which include triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. Layers were grown over a temperature range between 525 and 575 C, a V/III ratio range between 0.9 and 1.7, x < 0.2 and y < 0.2, and on (100) GaSb substrates with 2{degree} toward (100) or 6{degree} toward (111)B. The overall material quality of these alloys depends on growth temperature, In content, V/III ratio, and substrate misorientation. A mirror-like surface morphology and room temperature photoluminescence (PL) could be obtained for GaInAsSb layers with peak emission in the wavelength range between 2 and 2.4 {micro}m. Based on epilayer surface morphology and low temperature PL spectra, the crystal quality improves for growth temperature decreasing from 575 to 525 C, and with decreasing In content. In general, GaInAsSb layers grown on (100) GaSb substrates with a 6{degree} toward (111)B misorientation exhibited smoother surfaces and narrower full width at half-maximum values of 4 K PL spectra than layers grown on the more standard substrate 9100 2{degree} toward (110). Nominally undoped GaInAsSb layers grown at 550 C are p-type with 300 K hole concentration ofmore » {approximately} 5 {times} 10{sup 15} cm{sup {minus}3} and hole mobility of {approximately} 430 to 560 cm{sup 2}/V-s. The n- and p-type doping of GaInAsSb with diethyltellurium and dimethylzinc, respectively, are also reported.« less

Authors:
;  [1]
  1. Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.
Publication Date:
Research Org.:
Knolls Atomic Power Lab. (KAPL), Niskayuna, NY (United States)
Sponsoring Org.:
USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
OSTI Identifier:
319870
Report Number(s):
KAPL-P-000197; K-97139; CONF-980708-
ON: DE99001972; TRN: 99:003974
DOE Contract Number:  
AC12-76SN00052
Resource Type:
Technical Report
Resource Relation:
Conference: 1998 ASME/JSME joint pressure vessel and piping (PVP) conference, San Diego, CA (United States), 26-30 Jul 1998; Other Information: PBD: Dec 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; ELECTRICAL PROPERTIES; INDIUM ARSENIDES; GALLIUM ARSENIDES; INDIUM ANTIMONIDES; GALLIUM ANTIMONIDES; ORGANOMETALLIC COMPOUNDS; MORPHOLOGY; EXPERIMENTAL DATA

Citation Formats

Charache, G W, and Wang, C A. OMVPE growth of GaInAsSb in the 2 to 2.4 {micro}m range. United States: N. p., 1997. Web. doi:10.2172/319870.
Charache, G W, & Wang, C A. OMVPE growth of GaInAsSb in the 2 to 2.4 {micro}m range. United States. https://doi.org/10.2172/319870
Charache, G W, and Wang, C A. Mon . "OMVPE growth of GaInAsSb in the 2 to 2.4 {micro}m range". United States. https://doi.org/10.2172/319870. https://www.osti.gov/servlets/purl/319870.
@article{osti_319870,
title = {OMVPE growth of GaInAsSb in the 2 to 2.4 {micro}m range},
author = {Charache, G W and Wang, C A},
abstractNote = {Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy using all organometallic precursors, which include triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. Layers were grown over a temperature range between 525 and 575 C, a V/III ratio range between 0.9 and 1.7, x < 0.2 and y < 0.2, and on (100) GaSb substrates with 2{degree} toward (100) or 6{degree} toward (111)B. The overall material quality of these alloys depends on growth temperature, In content, V/III ratio, and substrate misorientation. A mirror-like surface morphology and room temperature photoluminescence (PL) could be obtained for GaInAsSb layers with peak emission in the wavelength range between 2 and 2.4 {micro}m. Based on epilayer surface morphology and low temperature PL spectra, the crystal quality improves for growth temperature decreasing from 575 to 525 C, and with decreasing In content. In general, GaInAsSb layers grown on (100) GaSb substrates with a 6{degree} toward (111)B misorientation exhibited smoother surfaces and narrower full width at half-maximum values of 4 K PL spectra than layers grown on the more standard substrate 9100 2{degree} toward (110). Nominally undoped GaInAsSb layers grown at 550 C are p-type with 300 K hole concentration of {approximately} 5 {times} 10{sup 15} cm{sup {minus}3} and hole mobility of {approximately} 430 to 560 cm{sup 2}/V-s. The n- and p-type doping of GaInAsSb with diethyltellurium and dimethylzinc, respectively, are also reported.},
doi = {10.2172/319870},
url = {https://www.osti.gov/biblio/319870}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {12}
}