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Title: RF/microwave non-destructive measurements of electrical properties of semiconductor wafers for thermophotovoltaic applications

Abstract

A radio-frequency/microwave measurement system has been designed for non-contacting determination of sheet resistance and excess carrier lifetime of low-bandgap materials and junctions, specifically GaSb-based alloys for thermophotovoltaic (TPV) applications. The design incorporates RF circuitry in the 100--500 MHz frequency range and utilizes a Q-switched YAG laser at 1.32 microns to photo-generate electron-hole pairs and conductivity modulate the material and/or junction under test. Supplementary measurements with a GaAs pulsed diode laser at 904 nm provides a faster transient response with near-surface photogeneration. Initial measurements on GaSb substrates, Zn-diffused materials and epitaxially grown layers are presented and discussed.

Authors:
; ;  [1]
  1. Rensselaer Polytechnic Inst., Troy, NY (United States) [and others
Publication Date:
Research Org.:
Knolls Atomic Power Lab., Schenectady, NY (United States)
Sponsoring Org.:
USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
OSTI Identifier:
319869
Report Number(s):
KAPL-P-000175; K-97059; CONF-9705119-
ON: DE99001909; TRN: AHC29909%%124
DOE Contract Number:
AC12-76SN00052
Resource Type:
Technical Report
Resource Relation:
Conference: 3. NREL conference on thermophotovoltaic (TPV) generation of electricity, Colorado Springs, CO (United States), 18-21 May 1997; Other Information: PBD: May 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 30 DIRECT ENERGY CONVERSION; ELECTRIC CONDUCTIVITY; CARRIER LIFETIME; GALLIUM ANTIMONIDES; THERMOPHOTOVOLTAIC CONVERTERS; NONDESTRUCTIVE TESTING; MICROWAVE EQUIPMENT; EXPERIMENTAL DATA

Citation Formats

Saroop, S., Borrego, J.M., and Gutmann, R.J.. RF/microwave non-destructive measurements of electrical properties of semiconductor wafers for thermophotovoltaic applications. United States: N. p., 1997. Web. doi:10.2172/319869.
Saroop, S., Borrego, J.M., & Gutmann, R.J.. RF/microwave non-destructive measurements of electrical properties of semiconductor wafers for thermophotovoltaic applications. United States. doi:10.2172/319869.
Saroop, S., Borrego, J.M., and Gutmann, R.J.. Thu . "RF/microwave non-destructive measurements of electrical properties of semiconductor wafers for thermophotovoltaic applications". United States. doi:10.2172/319869. https://www.osti.gov/servlets/purl/319869.
@article{osti_319869,
title = {RF/microwave non-destructive measurements of electrical properties of semiconductor wafers for thermophotovoltaic applications},
author = {Saroop, S. and Borrego, J.M. and Gutmann, R.J.},
abstractNote = {A radio-frequency/microwave measurement system has been designed for non-contacting determination of sheet resistance and excess carrier lifetime of low-bandgap materials and junctions, specifically GaSb-based alloys for thermophotovoltaic (TPV) applications. The design incorporates RF circuitry in the 100--500 MHz frequency range and utilizes a Q-switched YAG laser at 1.32 microns to photo-generate electron-hole pairs and conductivity modulate the material and/or junction under test. Supplementary measurements with a GaAs pulsed diode laser at 904 nm provides a faster transient response with near-surface photogeneration. Initial measurements on GaSb substrates, Zn-diffused materials and epitaxially grown layers are presented and discussed.},
doi = {10.2172/319869},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu May 01 00:00:00 EDT 1997},
month = {Thu May 01 00:00:00 EDT 1997}
}

Technical Report:

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