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Title: Experimental evidence of improved thermoelectric properties at 300K in Si/Ge superlattice structures

Abstract

The authors have found that it may be possible to obtain significant enhancement in ZT at 300 K, over conventional bulk SiGe alloys, through the use of Si/Ge Superlattice (SL) structures. The Seebeck coefficient in Si/Ge SL structures was observed to increase rapidly with decreasing SL period with no loss of electrical conductivity. The carrier mobilities in Si/Ge SLs were higher than in a comparable thin-film Si/Ge alloy. The best power factor of the short-period Si/Ge SLs is 112.2 {micro}W/K{sup 2} cm, over five-fold better than state-of-the-art n-type, bulk SiGe alloys. Approximately a two to four-fold reduction in thermal conductivity in short-period SL structures, compared to bulk SiGe alloy, was observed. The authors estimate at least a factor of five improvement over current state-of-the-art SiGe alloys, in several Si/Ge SL samples with periodicity of {approximately}45 to 75 {angstrom}. The results of this study are promising, but tentative due to the possible effects of substrate and the developmental nature of the thermoelectric property measurements.

Authors:
; ; ;  [1]
  1. Research Triangle Inst., Research Triangle Park, NC (United States)
Publication Date:
Research Org.:
Knolls Atomic Power Lab., Schenectady, NY (United States)
Sponsoring Org.:
USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
OSTI Identifier:
319833
Report Number(s):
KAPL-P-000155; K-97030; CONF-970302-
ON: DE99001878; TRN: 99:003947
DOE Contract Number:  
AC12-76SN00052
Resource Type:
Technical Report
Resource Relation:
Conference: Spring meeting of the Materials Research Society, San Francisco, CA (United States), 31 Mar - 4 Apr 1997; Other Information: PBD: Apr 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; THERMOELECTRIC PROPERTIES; THERMAL CONDUCTIVITY; SILICON; GERMANIUM; COMPOSITE MATERIALS; SEEBECK EFFECT; CARRIER MOBILITY; EXPERIMENTAL DATA

Citation Formats

Venkatasubramanian, R., Colpitts, T., Watko, E., and Malta, D. Experimental evidence of improved thermoelectric properties at 300K in Si/Ge superlattice structures. United States: N. p., 1997. Web. doi:10.2172/319833.
Venkatasubramanian, R., Colpitts, T., Watko, E., & Malta, D. Experimental evidence of improved thermoelectric properties at 300K in Si/Ge superlattice structures. United States. doi:10.2172/319833.
Venkatasubramanian, R., Colpitts, T., Watko, E., and Malta, D. Tue . "Experimental evidence of improved thermoelectric properties at 300K in Si/Ge superlattice structures". United States. doi:10.2172/319833. https://www.osti.gov/servlets/purl/319833.
@article{osti_319833,
title = {Experimental evidence of improved thermoelectric properties at 300K in Si/Ge superlattice structures},
author = {Venkatasubramanian, R. and Colpitts, T. and Watko, E. and Malta, D.},
abstractNote = {The authors have found that it may be possible to obtain significant enhancement in ZT at 300 K, over conventional bulk SiGe alloys, through the use of Si/Ge Superlattice (SL) structures. The Seebeck coefficient in Si/Ge SL structures was observed to increase rapidly with decreasing SL period with no loss of electrical conductivity. The carrier mobilities in Si/Ge SLs were higher than in a comparable thin-film Si/Ge alloy. The best power factor of the short-period Si/Ge SLs is 112.2 {micro}W/K{sup 2} cm, over five-fold better than state-of-the-art n-type, bulk SiGe alloys. Approximately a two to four-fold reduction in thermal conductivity in short-period SL structures, compared to bulk SiGe alloy, was observed. The authors estimate at least a factor of five improvement over current state-of-the-art SiGe alloys, in several Si/Ge SL samples with periodicity of {approximately}45 to 75 {angstrom}. The results of this study are promising, but tentative due to the possible effects of substrate and the developmental nature of the thermoelectric property measurements.},
doi = {10.2172/319833},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 01 00:00:00 EST 1997},
month = {Tue Apr 01 00:00:00 EST 1997}
}

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