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Title: Thermoelectric properties of ZnSb films grown by MOCVD

Abstract

The thermoelectric properties of metallorganic chemical vapor deposited (MOCVD) ZnSb films are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the growth of thicker ZnSb films lead to improved carrier mobilities and lower free-carrier concentrations. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 to 170 C, with peak Seebeck coefficients as high as 470 {micro}V/K at 220 C. The various growth conditions, including the use of intentional dopants, to improve the Seebeck coefficients at room temperature and above, are discussed. A short annealing of the ZnSb films at temperatures of {approximately} 200 C resulted in reduced free-carrier levels and higher Seebeck coefficients at 300 K. Finally, ZT values based on preliminary thermal conductivity measurements using the 3-{omega} method are reported.

Authors:
; ;  [1]
  1. Research Triangle Inst., Research Triangle Park, NC (United States)
Publication Date:
Research Org.:
Knolls Atomic Power Lab., Schenectady, NY (United States)
Sponsoring Org.:
USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
OSTI Identifier:
319831
Report Number(s):
KAPL-P-000153; K-97022; CONF-9704192-
ON: DE99001893; TRN: 99:003938
DOE Contract Number:  
AC12-76SN00052
Resource Type:
Technical Report
Resource Relation:
Conference: 1997 spring meeting of the Materials Research Society, San Francisco, CA (United States), 2 Apr 1997; Other Information: PBD: Apr 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; THERMOELECTRIC PROPERTIES; THERMAL CONDUCTIVITY; ZINC ALLOYS; ANTIMONY ALLOYS; INTERMETALLIC COMPOUNDS; THIN FILMS; HALL EFFECT; SEEBECK EFFECT; EXPERIMENTAL DATA

Citation Formats

Venkatasubramanian, R., Watko, E., and Colpitts, T. Thermoelectric properties of ZnSb films grown by MOCVD. United States: N. p., 1997. Web. doi:10.2172/319831.
Venkatasubramanian, R., Watko, E., & Colpitts, T. Thermoelectric properties of ZnSb films grown by MOCVD. United States. doi:10.2172/319831.
Venkatasubramanian, R., Watko, E., and Colpitts, T. Tue . "Thermoelectric properties of ZnSb films grown by MOCVD". United States. doi:10.2172/319831. https://www.osti.gov/servlets/purl/319831.
@article{osti_319831,
title = {Thermoelectric properties of ZnSb films grown by MOCVD},
author = {Venkatasubramanian, R. and Watko, E. and Colpitts, T.},
abstractNote = {The thermoelectric properties of metallorganic chemical vapor deposited (MOCVD) ZnSb films are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the growth of thicker ZnSb films lead to improved carrier mobilities and lower free-carrier concentrations. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 to 170 C, with peak Seebeck coefficients as high as 470 {micro}V/K at 220 C. The various growth conditions, including the use of intentional dopants, to improve the Seebeck coefficients at room temperature and above, are discussed. A short annealing of the ZnSb films at temperatures of {approximately} 200 C resulted in reduced free-carrier levels and higher Seebeck coefficients at 300 K. Finally, ZT values based on preliminary thermal conductivity measurements using the 3-{omega} method are reported.},
doi = {10.2172/319831},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {4}
}