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Title: Ternary and quaternary antimonide devices for thermophotovoltaic applications

Abstract

Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. GaInSb ternary devices were grown by metalorganic vapor phase epitaxy (MOVPE) with buffer layers to accommodate the lattice mismatch, and GaInAsSb lattice-matched quaternaries were grown by MOVPE and by liquid phase epitaxy (LPE). Improved devices are obtained when optical absorption occurs in the p-layer due to the longer minority carrier diffusion length. Thick emitter p/n devices are limited by surface recombination, with highest quantum efficiency and lowest dark current being achieved with epitaxially grown surface passivation layers on lattice-matched MOVPE quaternaries. Thin emitter/thick base n/p devices are very promising, but require improved shallow high-quality n-type ohmic contacts.

Authors:
; ; ;  [1];  [2]; ;  [3]
  1. Rensselaer Polytechnic Inst., Troy, NY (United States). Center for Integrated Electronics and Electronics Manufacturing
  2. Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.
  3. Lockheed Martin, Inc., Schenectady, NY (United States)
Publication Date:
Research Org.:
Knolls Atomic Power Lab., Schenectady, NY (United States)
Sponsoring Org.:
USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
OSTI Identifier:
307840
Report Number(s):
KAPL-P-000083; K-98073; CONF-9805146-
ON: DE99001572; TRN: AHC29905%%17
DOE Contract Number:  
AC12-76SN00052
Resource Type:
Technical Report
Resource Relation:
Conference: 9. international conference on MOVPE, La Jolla, CA (United States), 30 May - 4 Jun 1998; Other Information: PBD: Jun 1998
Country of Publication:
United States
Language:
English
Subject:
30 DIRECT ENERGY CONVERSION; 36 MATERIALS SCIENCE; THERMOPHOTOVOLTAIC CONVERTERS; FABRICATION; GALLIUM ANTIMONIDES; INDIUM ANTIMONIDES; VAPOR PHASE EPITAXY; GALLIUM ARSENIDES; INDIUM ARSENIDES; LIQUID PHASE EPITAXY; DIFFUSION LENGTH; QUANTUM EFFICIENCY; PHOTOCURRENTS; EXPERIMENTAL DATA

Citation Formats

Hitchcock, C.W., Gutmann, R.J., Ehsani, H., Bhat, I.B., Wang, C.A., Freeman, M.J., and Charache, G.W. Ternary and quaternary antimonide devices for thermophotovoltaic applications. United States: N. p., 1998. Web. doi:10.2172/307840.
Hitchcock, C.W., Gutmann, R.J., Ehsani, H., Bhat, I.B., Wang, C.A., Freeman, M.J., & Charache, G.W. Ternary and quaternary antimonide devices for thermophotovoltaic applications. United States. doi:10.2172/307840.
Hitchcock, C.W., Gutmann, R.J., Ehsani, H., Bhat, I.B., Wang, C.A., Freeman, M.J., and Charache, G.W. Mon . "Ternary and quaternary antimonide devices for thermophotovoltaic applications". United States. doi:10.2172/307840. https://www.osti.gov/servlets/purl/307840.
@article{osti_307840,
title = {Ternary and quaternary antimonide devices for thermophotovoltaic applications},
author = {Hitchcock, C.W. and Gutmann, R.J. and Ehsani, H. and Bhat, I.B. and Wang, C.A. and Freeman, M.J. and Charache, G.W.},
abstractNote = {Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. GaInSb ternary devices were grown by metalorganic vapor phase epitaxy (MOVPE) with buffer layers to accommodate the lattice mismatch, and GaInAsSb lattice-matched quaternaries were grown by MOVPE and by liquid phase epitaxy (LPE). Improved devices are obtained when optical absorption occurs in the p-layer due to the longer minority carrier diffusion length. Thick emitter p/n devices are limited by surface recombination, with highest quantum efficiency and lowest dark current being achieved with epitaxially grown surface passivation layers on lattice-matched MOVPE quaternaries. Thin emitter/thick base n/p devices are very promising, but require improved shallow high-quality n-type ohmic contacts.},
doi = {10.2172/307840},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jun 01 00:00:00 EDT 1998},
month = {Mon Jun 01 00:00:00 EDT 1998}
}

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