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Title: Use of the effective heat of formation model to determine phase formation sequences of In-Se, Ga-Se, Cu-Se, and Ga-In multilayer thin films

Journal Article · · Journal of Electronic Materials
;  [1];  [2]
  1. Colorado School of Mines, Golden, CO (United States). Dept. of Metallurgical and Materials Engineering
  2. National Renewable Energy Lab., Golden, CO (United States). Solar Energy Research Facility

Multilayer thin films of indium-selenium, gallium-selenium, copper-selenium, and gallium-indium have been analyzed for the purpose of understanding thin film phase transformations that are relevant to the production of Cu(In,Ga)Se{sub 2} photovoltaic solar cells. For example, the intermetallic phases that are present during selenization of precursor films will affect film microstructure and the resulting film properties. Throughout this research, the effective heat of formation model has been used to predict phase formation sequences. The accuracy of these predictions was explored experimentally. By using differential thermal analysis, the reactions of product film formation were examined. X-ray diffraction was used to determine reactant and product phases.

Sponsoring Organization:
USDOE
OSTI ID:
305405
Journal Information:
Journal of Electronic Materials, Vol. 27, Issue 12; Other Information: DN: Paper presented at the TMS Electronic, Magnetic and Photonic Materials Division second conference on transient thermal processing, February 1998, San Antonio, TX (US); PBD: Dec 1998
Country of Publication:
United States
Language:
English