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Title: 23.5% efficient silicon solar cell with rear micro contacts of c-Si/{micro}c-Si:H heterostructure

Conference ·
OSTI ID:302483

To obtain high efficiency silicon solar cells, the authors have investigated the rear heterostructure comprising a p-type single crystalline silicon (c-Si) substrate and a highly boron doped (p{sup +}) hydrogenated microcrystalline silicon ({micro}c-Si:H) film. This heterostructure was formed by rear micro contacts where a SiO{sub 2} film was opened on the rear surface of the substrate. V{sub oc} was improved by an effective BSF using this heterostructure. With optimal design of finger electrode patterns, a conversion efficiency of 23.5% (AM1.5, 25 C, 100 mW/cm{sup 2}) was obtained for a single crystalline silicon solar cell in 5 x 5 cm{sup 2} area.

Sponsoring Organization:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
OSTI ID:
302483
Report Number(s):
CONF-970953-; TRN: IM9904%%271
Resource Relation:
Conference: 26. IEEE photovoltaic specialists conference, Anaheim, CA (United States), 29 Sep - 3 Oct 1997; Other Information: PBD: 1997; Related Information: Is Part Of Conference record of the twenty sixth IEEE photovoltaic specialists conference -- 1997; PB: 1477 p.
Country of Publication:
United States
Language:
English