Modeling the growth of PECVD silicon nitride films for crystalline silicon solar cells using factorial design and response surface methodology
- Helsinki Univ. of Technology, Espoo (Finland)
- Microchemistry Ltd., Espoo (Finland)
Silicon nitride was grown on polished Si wafers by a parallel plate PECVD reactor. Reaction gases were NH{sub 3} and 3% SiH{sub 4} in Ar and the rf frequency was 13.56 MHz. The film thickness and refractive index were measured by an ellipsometer. The results were analyzed using response surface methodology. The results indicate that the silane-to-ammonia flow rate ratio is the dominating parameter when determining the refractive index and that the total gas flow rate and the chamber pressure dominate the growth rate, whereas rf power has a less strong impact on growth rate and no impact on refractive index. The previous results will be used when growing passivating antireflection coatings on three grain Si solar cells.
- OSTI ID:
- 302455
- Report Number(s):
- CONF-970953-; TRN: IM9904%%243
- Resource Relation:
- Conference: 26. IEEE photovoltaic specialists conference, Anaheim, CA (United States), 29 Sep - 3 Oct 1997; Other Information: PBD: 1997; Related Information: Is Part Of Conference record of the twenty sixth IEEE photovoltaic specialists conference -- 1997; PB: 1477 p.
- Country of Publication:
- United States
- Language:
- English
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