InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

Journal Article · Mon Feb 01 00:00:00 EST 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.123105· OSTI ID:295499

Kurtz, S R; Allerman, A A; Jones, E D; Gee, J M; Banas, J J; Hammons, B E ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)

The design, growth by metalorganic chemical vapor deposition, and processing of an In{sub 0.07}Ga{sub 0.93}As{sub 0.98}N{sub 0.02} solar cell, with 1.0 eV band gap, lattice matched to GaAs is described. The hole diffusion length in annealed, {ital n}-type InGaAsN is 0.6{endash}0.8 {mu}m, and solar cell internal quantum efficiencies {gt}70{percent} are obtained. Optical studies indicate that defects or impurities, from InGaAsN doping and nitrogen incorporation, limit solar cell performance. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 295499
• Journal Information: Applied Physics Letters, Vol. 74, Issue 5; Other Information: PBD: Feb 1999
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SOLAR CELLS
INDIUM COMPOUNDS
CARRIER LIFETIME
PHOTOLUMINESCENCE
INFRARED SPECTRA
GALLIUM ARSENIDE SOLAR CELLS
ENERGY GAP
INDIUM ARSENIDES
NITROGEN ADDITIONS
CHEMICAL VAPOR DEPOSITION
DIFFUSION LENGTH
QUANTUM EFFICIENCY
PERFORMANCE
IMPURITIES
CRYSTAL DEFECTS