Time-resolved photoluminescence studies of an ionized donor-bound exciton in GaN
- Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)
Time-resolved photoluminescence (PL) spectroscopy has been used to study the radiative recombination of excitons bound to ionized donors in GaN doped with both Mg and Si at concentrations of 5{times}10{sup 18}/cm{sup 3} and 1.5{times}10{sup 17}/cm{sup 3}, respectively. Low temperature (T{approximately}10K) time-resolved, as well as integrated PL spectra, identify an ionized donor-bound (Si) exciton peak (D{sup +}X) approximately 11.5 meV below and a neutral acceptor-bound exciton (A{sup 0}X) 20.5 meV below the free exciton peak. Rapid decay of the free exciton emission ({le}20 ps) implies that excitons are quickly captured by acceptors and ionized donors. We find the (A{sup 0}X) emission lifetime is consistent with previous measurements for GaN:Mg epilayers, while the (D{sup +}X) lifetime of 160 ps is longer than that of the well studied neutral donor-bound exciton (D{sup 0}X). The measured (D{sup +}X) lifetime, in comparison with (D{sup 0}X) and (A{sup 0}X), suggests that the state is stable at low temperature. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 295495
- Journal Information:
- Applied Physics Letters, Vol. 74, Issue 4; Other Information: PBD: Jan 1999
- Country of Publication:
- United States
- Language:
- English
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