Uncooled IR photon detection using MEMS micro-structures
Generation of free carriers in a semiconductor gives rise to mechanical stress. Photo-induced stress phenomena in MEMS micro-structures can be used in the room temperature detection of infrared photons. Choice of the appropriate semiconductor material for the MEMS micro-structures determines the cutoff wavelength of the uncooled infrared photon detector. The authors have measured the deflection of silicon and indium antimonide micro-structures resulting from a photo-induced stress. The excess charge carriers responsible for the photo-induced stress were produced via photon irradiation from both a diode laser and a black body source. In the case of Si, the photo-induced stress is of opposite direction and about four times larger than the thermal stress. For indium antimonide the direction of stress is the same as due to thermal effects. The photo-induced stress can be distinguished from the thermal stress based on the cut-off wavelength, response speed, and perhaps the direction of the microstructure deflection.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- Defense Advanced Research Projects Agency, Arlington, VA (United States)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 290941
- Report Number(s):
- ORNL/CP-99567; CONF-980944-; ON: DE99000236; TRN: AHC29901%%146
- Resource Relation:
- Conference: IRIS meeting on materials and detectors, Boulder, CO (United States), 11 Sep 1998; Other Information: PBD: Aug 1998
- Country of Publication:
- United States
- Language:
- English
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