On the initial stages of AlN thin-film growth onto (0001) oriented Al{sub 2}O{sub 3} substrates by molecular beam epitaxy
- Materials and Engineering Sciences Center, Sandia National Laboratories, P.O. Box 969, Livermore, California 94551 (United States)
Conventional and high-resolution transmission electron microscopy are used to characterize the initial stages of AlN thin-film growth. AlN films are deposited by molecular beam epitaxy onto annealed (0001) oriented {alpha}-Al{sub 2}O{sub 3} (sapphire) substrates. During the initial stages of film growth (film thickness {approximately}25 nm) AlN forms islands of varying alignment with the Al{sub 2}O{sub 3} substrate. Some of the AlN islands are well aligned with the [11{bar 2}0]AlN{parallel}[10{bar 1}0] Al{sub 2}O{sub 3} and (0001)AlN{parallel}(0001)Al{sub 2}O{sub 3}, which matches closed-packed planes and directions. Other islands exhibit either an alignment of one set of planes, i.e., grains are aligned with the (1{bar 1}01)AlN{parallel}(11{bar 2}0) Al{sub 2}O{sub 3}, or are misaligned with respect to the Al{sub 2}O{sub 3} substrate. As the AlN film grows in thickness (film thickness {approximately}100 nm), the film becomes continuous, and the closed-packed planes and directions of the film and substrate are aligned for the majority of the film. Islands of AlN with an alignment other than this predominant orientation disturb the growth near the AlN/Al{sub 2}O{sub 3} interface and create displacements along the [0001] AlN direction in overlying AlN grains. These misaligned AlN grains provide one source for the formation of planar defects in the epitaxial AlN films. The evolution of the AlN film microstructure and the reasons for the observed orientation relationships are discussed. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 289247
- Journal Information:
- Journal of Applied Physics, Vol. 85, Issue 1; Other Information: PBD: Jan 1999
- Country of Publication:
- United States
- Language:
- English
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